Giant intrinsic carrier mobilities in graphene and its bilayer

S. V. Morozov; K. S. Novoselov; M. I. Katsnelson; F. Schedin; D. C. Elias; J. A. Jaszczak; A. K. Geim

doi:10.1103/PhysRevLett.100.016602

Giant intrinsic carrier mobilities in graphene and its bilayer

S. V. Morozov, K. S. Novoselov, M. I. Katsnelson, F. Schedin, D. C. Elias, J. A. Jaszczak, A. K. Geim

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Abstract

We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our measurements show that mobilities higher than 200000cm2/Vs are achievable, if extrinsic disorder is eliminated. A sharp (thresholdlike) increase in resistivity observed above ∼200/K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intraripple flexural phonons. © 2008 The American Physical Society.

Original language	English
Article number	016602
Journal	Physical Review Letters
Volume	100
Issue number	1
DOIs	https://doi.org/10.1103/PhysRevLett.100.016602
Publication status	Published - 7 Jan 2008

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AU - Novoselov, K. S.

AU - Katsnelson, M. I.

AU - Schedin, F.

AU - Elias, D. C.

AU - Jaszczak, J. A.

AU - Geim, A. K.

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Giant intrinsic carrier mobilities in graphene and its bilayer

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