Giant intrinsic carrier mobilities in graphene and its bilayer

S. V. Morozov, K. S. Novoselov, M. I. Katsnelson, F. Schedin, D. C. Elias, J. A. Jaszczak, A. K. Geim

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    We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our measurements show that mobilities higher than 200000cm2/Vs are achievable, if extrinsic disorder is eliminated. A sharp (thresholdlike) increase in resistivity observed above ∼200/K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intraripple flexural phonons. © 2008 The American Physical Society.
    Original languageEnglish
    Article number016602
    JournalPhysical Review Letters
    Issue number1
    Publication statusPublished - 7 Jan 2008


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