Abstract
We report on a "giant" quantum Hall effect plateau in a graphene-based field-effect transistor where graphene is capped by a layer of the van der Waals crystal InSe. The giant quantum Hall effect plateau arises from the close alignment of the conduction band edge of InSe with the Dirac point of graphene. This feature enables the magnetic-field- and electric-field-effect-induced transfer of charge carriers between InSe and the degenerate Landau level states of the adjacent graphene layer, which is coupled by a van der Waals heterointerface to the InSe.
Original language | English |
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Article number | 157701 |
Journal | Physical Review Letters |
Volume | 119 |
Issue number | 15 |
DOIs | |
Publication status | Published - 10 Oct 2017 |
Research Beacons, Institutes and Platforms
- National Graphene Institute