Giant Quantum Hall Plateau in Graphene Coupled to an InSe van der Waals Crystal

Z. R. Kudrynskyi, M. A. Bhuiyan, O. Makarovsky*, J. D.G. Greener, E. E. Vdovin, Z. D. Kovalyuk, Y. Cao, A. Mishchenko, K. S. Novoselov, P. H. Beton, L. Eaves, A. Patanè

*Corresponding author for this work

    Research output: Contribution to journalArticlepeer-review

    Abstract

    We report on a "giant" quantum Hall effect plateau in a graphene-based field-effect transistor where graphene is capped by a layer of the van der Waals crystal InSe. The giant quantum Hall effect plateau arises from the close alignment of the conduction band edge of InSe with the Dirac point of graphene. This feature enables the magnetic-field- and electric-field-effect-induced transfer of charge carriers between InSe and the degenerate Landau level states of the adjacent graphene layer, which is coupled by a van der Waals heterointerface to the InSe.

    Original languageEnglish
    Article number157701
    JournalPhysical Review Letters
    Volume119
    Issue number15
    DOIs
    Publication statusPublished - 10 Oct 2017

    Research Beacons, Institutes and Platforms

    • National Graphene Institute

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