Giant temperature resonances of noise in submicron quantum well structures

S. T. Stoddart, A. K. Geim, S. J. Bending, J. J. Harris, A. J. Peck, K. Ploog

    Research output: Contribution to journalArticlepeer-review


    We show that excess noise in micron-sized samples fabricated from Si-doped GaAs/GaAlAs quantum wells and heterostructures is a strong non-monotonic function of temperature with several sharp peaks below room temperature. The noise power at the peaks exceeds the background noise by several orders of magnitude. The observed behaviour represents a classical noise source where only a single type of switching defect with a well-defined activation energy is present. We attribute the resonances to deep metastable donors and provisionally identify one of the donors as the known DX-centre in GaAs and GaAlAs. © 1994.
    Original languageEnglish
    Pages (from-to)1011-1014
    Number of pages3
    JournalSolid State Electronics
    Issue number4-6
    Publication statusPublished - Apr 1994


    • dx centers
    • fluctuations
    • spectroscopy
    • silicon
    • traps


    Dive into the research topics of 'Giant temperature resonances of noise in submicron quantum well structures'. Together they form a unique fingerprint.

    Cite this