Giant temperature resonances of noise in submicron quantum well structures

S. T. Stoddart; A. K. Geim; S. J. Bending; J. J. Harris; A. J. Peck; K. Ploog

Giant temperature resonances of noise in submicron quantum well structures

S. T. Stoddart, A. K. Geim, S. J. Bending, J. J. Harris, A. J. Peck, K. Ploog

Research output: Contribution to journal › Article › peer-review

Abstract

We show that excess noise in micron-sized samples fabricated from Si-doped GaAs/GaAlAs quantum wells and heterostructures is a strong non-monotonic function of temperature with several sharp peaks below room temperature. The noise power at the peaks exceeds the background noise by several orders of magnitude. The observed behaviour represents a classical noise source where only a single type of switching defect with a well-defined activation energy is present. We attribute the resonances to deep metastable donors and provisionally identify one of the donors as the known DX-centre in GaAs and GaAlAs. © 1994.

Original language	English
Pages (from-to)	1011-1014
Number of pages	3
Journal	Solid State Electronics
Volume	37
Issue number	4-6
Publication status	Published - Apr 1994

Keywords

dx centers
fluctuations
spectroscopy
silicon
traps

Cite this

@article{74a539a45c2c4e8ebc42b3f58f2ffb5d,

title = "Giant temperature resonances of noise in submicron quantum well structures",

abstract = "We show that excess noise in micron-sized samples fabricated from Si-doped GaAs/GaAlAs quantum wells and heterostructures is a strong non-monotonic function of temperature with several sharp peaks below room temperature. The noise power at the peaks exceeds the background noise by several orders of magnitude. The observed behaviour represents a classical noise source where only a single type of switching defect with a well-defined activation energy is present. We attribute the resonances to deep metastable donors and provisionally identify one of the donors as the known DX-centre in GaAs and GaAlAs. {\textcopyright} 1994.",

keywords = "dx centers, fluctuations, spectroscopy, silicon, traps",

author = "Stoddart, {S. T.} and Geim, {A. K.} and Bending, {S. J.} and Harris, {J. J.} and Peck, {A. J.} and K. Ploog",

note = "Ne796 Times Cited:3 Cited References Count:13",

year = "1994",

month = apr,

language = "English",

volume = "37",

pages = "1011--1014",

journal = "Solid State Electronics",

issn = "0038-1101",

publisher = "Elsevier BV",

number = "4-6",

}

TY - JOUR

T1 - Giant temperature resonances of noise in submicron quantum well structures

AU - Stoddart, S. T.

AU - Geim, A. K.

AU - Bending, S. J.

AU - Harris, J. J.

AU - Peck, A. J.

AU - Ploog, K.

N1 - Ne796 Times Cited:3 Cited References Count:13

PY - 1994/4

Y1 - 1994/4

N2 - We show that excess noise in micron-sized samples fabricated from Si-doped GaAs/GaAlAs quantum wells and heterostructures is a strong non-monotonic function of temperature with several sharp peaks below room temperature. The noise power at the peaks exceeds the background noise by several orders of magnitude. The observed behaviour represents a classical noise source where only a single type of switching defect with a well-defined activation energy is present. We attribute the resonances to deep metastable donors and provisionally identify one of the donors as the known DX-centre in GaAs and GaAlAs. © 1994.

AB - We show that excess noise in micron-sized samples fabricated from Si-doped GaAs/GaAlAs quantum wells and heterostructures is a strong non-monotonic function of temperature with several sharp peaks below room temperature. The noise power at the peaks exceeds the background noise by several orders of magnitude. The observed behaviour represents a classical noise source where only a single type of switching defect with a well-defined activation energy is present. We attribute the resonances to deep metastable donors and provisionally identify one of the donors as the known DX-centre in GaAs and GaAlAs. © 1994.

KW - dx centers

KW - fluctuations

KW - spectroscopy

KW - silicon

KW - traps

M3 - Article

SN - 0038-1101

VL - 37

SP - 1011

EP - 1014

JO - Solid State Electronics

JF - Solid State Electronics

IS - 4-6

ER -

Giant temperature resonances of noise in submicron quantum well structures

Abstract

Keywords

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