Gold-hydrogen complexes in silicon

L. Rubaldo; P. Deixler; I. D. Hawkins; J. Terry; O. K. Maude; J. C. Portal; J. H. Evans-Freeman; L. Dobaczewski; A. R. Peaker

doi:10.1016/S0921-5107(98)00278-5

Gold-hydrogen complexes in silicon

L. Rubaldo^*, P. Deixler, I. D. Hawkins, J. Terry, O. K. Maude, J. C. Portal, J. H. Evans-Freeman, L. Dobaczewski, A. R. Peaker

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

Electron emission from gold and gold-hydrogen complexes in n-type silicon have been studied using high resolution (Laplace) DLTS. This technique permits a clear separation of defects which have very similar carrier emission characteristics. At low hydrogen concentrations our results confirm those inferred previously from conventional DLTS. However by using `Laplace' DLTS it has been possible to study the gold acceptor and G4 defect independently. G4 has an activation energy of 542±8 meV. By directly measuring the electron capture cross-section of G4 we conclude that it is acceptor like. At high hydrogen concentrations additional complexes are formed, notably a defect with emission characteristics similar to G4 (referred to as G4′) with an activation energy of 578±10 meV, and a state with an activation energy for electron emission of 276 5 meV. We put forward the hypothesis that these may be charge states of AuH₂ or AuH₃ complexes.

Original language	English
Pages (from-to)	126-129
Number of pages	4
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	58
Issue number	1-2
DOIs	https://doi.org/10.1016/S0921-5107(98)00278-5
Publication status	Published - 12 Feb 1999

Keywords

Transition metal impurities
Hydrogen
Silicon
Complexes
DLTS

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10.1016/S0921-5107(98)00278-5

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title = "Gold-hydrogen complexes in silicon",

abstract = "Electron emission from gold and gold-hydrogen complexes in n-type silicon have been studied using high resolution (Laplace) DLTS. This technique permits a clear separation of defects which have very similar carrier emission characteristics. At low hydrogen concentrations our results confirm those inferred previously from conventional DLTS. However by using `Laplace' DLTS it has been possible to study the gold acceptor and G4 defect independently. G4 has an activation energy of 542±8 meV. By directly measuring the electron capture cross-section of G4 we conclude that it is acceptor like. At high hydrogen concentrations additional complexes are formed, notably a defect with emission characteristics similar to G4 (referred to as G4′) with an activation energy of 578±10 meV, and a state with an activation energy for electron emission of 276 5 meV. We put forward the hypothesis that these may be charge states of AuH2 or AuH3 complexes.",

keywords = "Transition metal impurities, Hydrogen, Silicon, Complexes, DLTS",

author = "L. Rubaldo and P. Deixler and Hawkins, {I. D.} and J. Terry and Maude, {O. K.} and Portal, {J. C.} and Evans-Freeman, {J. H.} and L. Dobaczewski and Peaker, {A. R.}",

year = "1999",

month = feb,

day = "12",

doi = "10.1016/S0921-5107(98)00278-5",

language = "English",

volume = "58",

pages = "126--129",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

publisher = "Elsevier BV",

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TY - JOUR

T1 - Gold-hydrogen complexes in silicon

AU - Rubaldo, L.

AU - Deixler, P.

AU - Hawkins, I. D.

AU - Terry, J.

AU - Maude, O. K.

AU - Portal, J. C.

AU - Evans-Freeman, J. H.

AU - Dobaczewski, L.

AU - Peaker, A. R.

PY - 1999/2/12

Y1 - 1999/2/12

N2 - Electron emission from gold and gold-hydrogen complexes in n-type silicon have been studied using high resolution (Laplace) DLTS. This technique permits a clear separation of defects which have very similar carrier emission characteristics. At low hydrogen concentrations our results confirm those inferred previously from conventional DLTS. However by using `Laplace' DLTS it has been possible to study the gold acceptor and G4 defect independently. G4 has an activation energy of 542±8 meV. By directly measuring the electron capture cross-section of G4 we conclude that it is acceptor like. At high hydrogen concentrations additional complexes are formed, notably a defect with emission characteristics similar to G4 (referred to as G4′) with an activation energy of 578±10 meV, and a state with an activation energy for electron emission of 276 5 meV. We put forward the hypothesis that these may be charge states of AuH2 or AuH3 complexes.

AB - Electron emission from gold and gold-hydrogen complexes in n-type silicon have been studied using high resolution (Laplace) DLTS. This technique permits a clear separation of defects which have very similar carrier emission characteristics. At low hydrogen concentrations our results confirm those inferred previously from conventional DLTS. However by using `Laplace' DLTS it has been possible to study the gold acceptor and G4 defect independently. G4 has an activation energy of 542±8 meV. By directly measuring the electron capture cross-section of G4 we conclude that it is acceptor like. At high hydrogen concentrations additional complexes are formed, notably a defect with emission characteristics similar to G4 (referred to as G4′) with an activation energy of 578±10 meV, and a state with an activation energy for electron emission of 276 5 meV. We put forward the hypothesis that these may be charge states of AuH2 or AuH3 complexes.

KW - Transition metal impurities

KW - Hydrogen

KW - Silicon

KW - Complexes

KW - DLTS

UR - http://www.scopus.com/inward/record.url?scp=0344210378&partnerID=8YFLogxK

U2 - 10.1016/S0921-5107(98)00278-5

DO - 10.1016/S0921-5107(98)00278-5

M3 - Conference article

AN - SCOPUS:0344210378

SN - 0921-5107

VL - 58

SP - 126

EP - 129

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 1-2

ER -

Gold-hydrogen complexes in silicon

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Keywords

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