Graphene bridge rectifier based on self-switching diode arrays

Jiawei Zhang, Joseph Brownless, Aimin Song

    Research output: Contribution to journal › Article › peer-review

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    Abstract

    Here, we present theory and measurements for a bridge rectifier formed from arrays of graphene self-switching diodes (GSSDs). Despite graphene’s lack of a bandgap and high carrier concentration causing a reduced rectification ratio, the extremely high carrier mobility will allow GSSDs to work at frequencies well into the THz region. Compared with a single SSD array, the bridge rectifier structure allows for full wave rectification of an AC signal. Here we derive an equation for the voltage output of a bridge rectifier formed from GSSDs, which predicts a quadratic relationship between output voltage and input current. This relationship is confirmed using AC and DC measurements. The fabricated rectifier is found to have a high room temperature intrinsic responsivity of 4,395 V/W at low frequency and a low noise equivalent power of 5.4 pW/Hz1/2.
    Original languageEnglish
    JournalNanotechnology
    Early online date31 May 2019
    DOIs
    Publication statusPublished - 2019

    Keywords

    • Self-switching diode
    • graphene
    • terahertz

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      • CDT in Science and Applications of Graphene and Related Nanomaterial

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