Graphene flakes at the SiO₂/organic-semiconductor interface for high-mobility field-effect transistors

We demonstrate that high-transconductance organic thin film transistors can be achieved by depositing electrochemically exfoliated graphene flakes at the gate-dielectric/organic semiconductor (OS) interface. This effect is applicable to both, solution processed, polymer-based and vacuum-evaporated small-molecule OS-based transistors. Poly(3-hexylthiophene) (P3HT) transistors exhibit a factor of seven higher charge carrier mobility, while pentacene transistors exhibit a fourfold increase in charge carrier mobility, if graphene flakes are present at the dielectric/OS interface.