Growth and characterisation of relaxed epilayers of InGaAs on GaAs

D.J. Dunstan; R.H. Dixon; P. Kidd; L.K. Howard; V.A. Wilkinson; J.D. Lambkin; C. Jeynes; M.P. Halsall; D. Lancefield; M.T. Emeny; P.J. Goodhew; K.P. Homewood; B.J. Sealy; A.R. Adams

Growth and characterisation of relaxed epilayers of InGaAs on GaAs

D.J. Dunstan, R.H. Dixon, P. Kidd, L.K. Howard, V.A. Wilkinson, J.D. Lambkin, C. Jeynes, M.P. Halsall, D. Lancefield, M.T. Emeny, P.J. Goodhew, K.P. Homewood, B.J. Sealy, A.R. Adams

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	589-600
Journal	J. Cryst. Growth
Volume	126
Publication status	Published - 1993

Cite this

@article{b91eb6f99ee7486999c4a9bb25742c97,

title = "Growth and characterisation of relaxed epilayers of InGaAs on GaAs",

author = "D.J. Dunstan and R.H. Dixon and P. Kidd and L.K. Howard and V.A. Wilkinson and J.D. Lambkin and C. Jeynes and M.P. Halsall and D. Lancefield and M.T. Emeny and P.J. Goodhew and K.P. Homewood and B.J. Sealy and A.R. Adams",

year = "1993",

language = "English",

volume = "126",

pages = "589--600",

journal = "J. Cryst. Growth",

issn = "1873-5002",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - Growth and characterisation of relaxed epilayers of InGaAs on GaAs

AU - Dunstan, D.J.

AU - Dixon, R.H.

AU - Kidd, P.

AU - Howard, L.K.

AU - Wilkinson, V.A.

AU - Lambkin, J.D.

AU - Jeynes, C.

AU - Halsall, M.P.

AU - Lancefield, D.

AU - Emeny, M.T.

AU - Goodhew, P.J.

AU - Homewood, K.P.

AU - Sealy, B.J.

AU - Adams, A.R.

PY - 1993

Y1 - 1993

M3 - Article

SN - 1873-5002

VL - 126

SP - 589

EP - 600

JO - J. Cryst. Growth

JF - J. Cryst. Growth

ER -