Growth and structural characterization of molecular beam epitaxial erbium-doped GaAs

I. Poole; K. E. Singer; A. R. Peaker; A. C. Wright

doi:10.1016/0022-0248(92)90181-H

Growth and structural characterization of molecular beam epitaxial erbium-doped GaAs

I. Poole^*, K. E. Singer, A. R. Peaker, A. C. Wright

^*Corresponding author for this work

EEE - Academic & Research

UMIST

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Abstract

Elemental erbium from a thermal effusion cell has been used to dope gallium arsenide grown by molecular beam epitaxy with erbium concentrations of 4 × 10¹⁶ to 2 × 10²⁰ cm^-3. No incorporation dependence on substrate temperature was observed over the range 540-630°C. Transmission electron microscopy has revealed a solubility limit of erbium in GaAs of approximately 7 × 10¹⁷ cm^-3 at 580°C. Above this concentration, erbium is incorporated primarily as near spherical micro-precipitates which possess a cubic (rocksalt) structure consistent with their chemical composition being ErAs. The precipitate size during the molecular beam epitaxial growth is dependent primarily on the substrate temperature and can be controlled in the 10-20 Å range. Larger precipitates produce misfit dislocations and are no longer spherical. The mechanism represents a simple method for the fabrication of quantum dots distributed uniformly in three dimensions.

Original language	English
Pages (from-to)	121-131
Number of pages	11
Journal	Journal of Crystal Growth
Volume	121
Issue number	1-2
DOIs	https://doi.org/10.1016/0022-0248(92)90181-H
Publication status	Published - Jun 1992

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title = "Growth and structural characterization of molecular beam epitaxial erbium-doped GaAs",

abstract = "Elemental erbium from a thermal effusion cell has been used to dope gallium arsenide grown by molecular beam epitaxy with erbium concentrations of 4 × 1016 to 2 × 1020 cm-3. No incorporation dependence on substrate temperature was observed over the range 540-630°C. Transmission electron microscopy has revealed a solubility limit of erbium in GaAs of approximately 7 × 1017 cm-3 at 580°C. Above this concentration, erbium is incorporated primarily as near spherical micro-precipitates which possess a cubic (rocksalt) structure consistent with their chemical composition being ErAs. The precipitate size during the molecular beam epitaxial growth is dependent primarily on the substrate temperature and can be controlled in the 10-20 {\AA} range. Larger precipitates produce misfit dislocations and are no longer spherical. The mechanism represents a simple method for the fabrication of quantum dots distributed uniformly in three dimensions.",

author = "I. Poole and Singer, \{K. E.\} and Peaker, \{A. R.\} and Wright, \{A. C.\}",

year = "1992",

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doi = "10.1016/0022-0248(92)90181-H",

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journal = "Journal of Crystal Growth ",

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T1 - Growth and structural characterization of molecular beam epitaxial erbium-doped GaAs

AU - Poole, I.

AU - Singer, K. E.

AU - Peaker, A. R.

AU - Wright, A. C.

PY - 1992/6

Y1 - 1992/6

N2 - Elemental erbium from a thermal effusion cell has been used to dope gallium arsenide grown by molecular beam epitaxy with erbium concentrations of 4 × 1016 to 2 × 1020 cm-3. No incorporation dependence on substrate temperature was observed over the range 540-630°C. Transmission electron microscopy has revealed a solubility limit of erbium in GaAs of approximately 7 × 1017 cm-3 at 580°C. Above this concentration, erbium is incorporated primarily as near spherical micro-precipitates which possess a cubic (rocksalt) structure consistent with their chemical composition being ErAs. The precipitate size during the molecular beam epitaxial growth is dependent primarily on the substrate temperature and can be controlled in the 10-20 Å range. Larger precipitates produce misfit dislocations and are no longer spherical. The mechanism represents a simple method for the fabrication of quantum dots distributed uniformly in three dimensions.

AB - Elemental erbium from a thermal effusion cell has been used to dope gallium arsenide grown by molecular beam epitaxy with erbium concentrations of 4 × 1016 to 2 × 1020 cm-3. No incorporation dependence on substrate temperature was observed over the range 540-630°C. Transmission electron microscopy has revealed a solubility limit of erbium in GaAs of approximately 7 × 1017 cm-3 at 580°C. Above this concentration, erbium is incorporated primarily as near spherical micro-precipitates which possess a cubic (rocksalt) structure consistent with their chemical composition being ErAs. The precipitate size during the molecular beam epitaxial growth is dependent primarily on the substrate temperature and can be controlled in the 10-20 Å range. Larger precipitates produce misfit dislocations and are no longer spherical. The mechanism represents a simple method for the fabrication of quantum dots distributed uniformly in three dimensions.

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IS - 1-2

ER -

Growth and structural characterization of molecular beam epitaxial erbium-doped GaAs

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