GSMBE growth and structural characterisation of SiGeC layers for HBT

J. Zhang; J. H. Neave; X. B. Li; P. F. Fewster; H. A W El Mubarek; P. Ashburn; I. Z. Mitrovic; O. Buiu; S. Hall

doi:10.1016/j.jcrysgro.2004.12.147

GSMBE growth and structural characterisation of SiGeC layers for HBT

J. Zhang, J. H. Neave, X. B. Li, P. F. Fewster, H. A W El Mubarek, P. Ashburn, I. Z. Mitrovic, O. Buiu, S. Hall

Research output: Contribution to journal › Article › peer-review

Abstract

Gas source molecular beam epitaxy is used for the growth of SiGeC layers from disilane, germane and methylsilane precursors at low substrate temperatures. A systematic method of carbon concentration determination based on a combination of X-ray diffraction and X-ray reflectivity is examined. The grown layers were annealed using rapid thermal annealing and analysed with X-ray diffraction, X-ray reflectivity and secondary ion mass spectrometry. The recovery of compressive strain in the SiGeC layer is correlated to the loss of carbon through diffusion and indicates that the carbon atoms are incorporated substitutionally in the as-grown layers. © 2005 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	505-511
Number of pages	6
Journal	Journal of Crystal Growth
Volume	278
Issue number	1-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.12.147
Publication status	Published - 1 May 2005

Keywords

A2. X-ray diffraction
A3. Molecular beam epitaxy
B1. Germanium silicon alloys
B2. Semiconducting silicon compounds
B3. Heterojunction semiconductor devices

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10.1016/j.jcrysgro.2004.12.147

Cite this

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title = "GSMBE growth and structural characterisation of SiGeC layers for HBT",

abstract = "Gas source molecular beam epitaxy is used for the growth of SiGeC layers from disilane, germane and methylsilane precursors at low substrate temperatures. A systematic method of carbon concentration determination based on a combination of X-ray diffraction and X-ray reflectivity is examined. The grown layers were annealed using rapid thermal annealing and analysed with X-ray diffraction, X-ray reflectivity and secondary ion mass spectrometry. The recovery of compressive strain in the SiGeC layer is correlated to the loss of carbon through diffusion and indicates that the carbon atoms are incorporated substitutionally in the as-grown layers. {\textcopyright} 2005 Elsevier B.V. All rights reserved.",

keywords = "A2. X-ray diffraction, A3. Molecular beam epitaxy, B1. Germanium silicon alloys, B2. Semiconducting silicon compounds, B3. Heterojunction semiconductor devices",

author = "J. Zhang and Neave, {J. H.} and Li, {X. B.} and Fewster, {P. F.} and {El Mubarek}, {H. A W} and P. Ashburn and Mitrovic, {I. Z.} and O. Buiu and S. Hall",

note = "Times Cited: 1 13th International Conference on Molecular Beam Epitaxy (MBE XII) AUG 22-27, 2004 Edinburgh, SCOTLAND",

year = "2005",

month = may,

day = "1",

doi = "10.1016/j.jcrysgro.2004.12.147",

language = "English",

volume = "278",

pages = "505--511",

journal = "Journal of Crystal Growth",

issn = "1873-5002",

publisher = "Elsevier BV",

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TY - JOUR

T1 - GSMBE growth and structural characterisation of SiGeC layers for HBT

AU - Zhang, J.

AU - Neave, J. H.

AU - Li, X. B.

AU - Fewster, P. F.

AU - El Mubarek, H. A W

AU - Ashburn, P.

AU - Mitrovic, I. Z.

AU - Buiu, O.

AU - Hall, S.

N1 - Times Cited: 1 13th International Conference on Molecular Beam Epitaxy (MBE XII) AUG 22-27, 2004 Edinburgh, SCOTLAND

PY - 2005/5/1

Y1 - 2005/5/1

N2 - Gas source molecular beam epitaxy is used for the growth of SiGeC layers from disilane, germane and methylsilane precursors at low substrate temperatures. A systematic method of carbon concentration determination based on a combination of X-ray diffraction and X-ray reflectivity is examined. The grown layers were annealed using rapid thermal annealing and analysed with X-ray diffraction, X-ray reflectivity and secondary ion mass spectrometry. The recovery of compressive strain in the SiGeC layer is correlated to the loss of carbon through diffusion and indicates that the carbon atoms are incorporated substitutionally in the as-grown layers. © 2005 Elsevier B.V. All rights reserved.

AB - Gas source molecular beam epitaxy is used for the growth of SiGeC layers from disilane, germane and methylsilane precursors at low substrate temperatures. A systematic method of carbon concentration determination based on a combination of X-ray diffraction and X-ray reflectivity is examined. The grown layers were annealed using rapid thermal annealing and analysed with X-ray diffraction, X-ray reflectivity and secondary ion mass spectrometry. The recovery of compressive strain in the SiGeC layer is correlated to the loss of carbon through diffusion and indicates that the carbon atoms are incorporated substitutionally in the as-grown layers. © 2005 Elsevier B.V. All rights reserved.

KW - A2. X-ray diffraction

KW - A3. Molecular beam epitaxy

KW - B1. Germanium silicon alloys

KW - B2. Semiconducting silicon compounds

KW - B3. Heterojunction semiconductor devices

U2 - 10.1016/j.jcrysgro.2004.12.147

DO - 10.1016/j.jcrysgro.2004.12.147

M3 - Article

SN - 1873-5002

VL - 278

SP - 505

EP - 511

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

GSMBE growth and structural characterisation of SiGeC layers for HBT

Abstract

Keywords

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