Half-volt operation of IGZO thin-film transistors enabled by ultrathin HfO2              gate dielectric

Pengfei Ma; Jiamin Sun; Guangda Liang; Yunpeng Li; Qian Xin; Yuxiang Li; Aimin Song

doi:10.1063/1.5037410

Half-volt operation of IGZO thin-film transistors enabled by ultrathin HfO₂ gate dielectric

Pengfei Ma, Jiamin Sun, Guangda Liang, Yunpeng Li, Qian Xin, Yuxiang Li, Aimin Song

Research output: Contribution to journal › Article › peer-review

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Original language	English
Article number	063501
Journal	Applied Physics Letters
Volume	113
Issue number	6
Early online date	7 Aug 2018
DOIs	https://doi.org/10.1063/1.5037410
Publication status	Published - 2018

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10.1063/1.5037410

20180624-Half-Volt Operation of IGZO Thin-Film Transistors Enabled byUltrathin HfO2 Gate DielectricAccepted author manuscript, 1.43 MB

http://aip.scitation.org/doi/10.1063/1.5037410

Nano-rectennas for heat-to-electricity conversion. Graphene
Song, A. (PI) & Hill, E. (CoI)
1/04/16 → 7/08/19
Project: Research

Cite this

@article{e6118484fac144798f646684e8f73101,

title = "Half-volt operation of IGZO thin-film transistors enabled by ultrathin HfO2 gate dielectric",

author = "Pengfei Ma and Jiamin Sun and Guangda Liang and Yunpeng Li and Qian Xin and Yuxiang Li and Aimin Song",

year = "2018",

doi = "10.1063/1.5037410",

language = "English",

volume = "113",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

}

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T1 - Half-volt operation of IGZO thin-film transistors enabled by ultrathin HfO2 gate dielectric

AU - Ma, Pengfei

AU - Sun, Jiamin

AU - Liang, Guangda

AU - Li, Yunpeng

AU - Xin, Qian

AU - Li, Yuxiang

AU - Song, Aimin

PY - 2018

Y1 - 2018

U2 - 10.1063/1.5037410

DO - 10.1063/1.5037410

M3 - Article

SN - 0003-6951

VL - 113

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 063501

ER -

Half-volt operation of IGZO thin-film transistors enabled by ultrathin HfO2 gate dielectric

Access to Document

Projects

Nano-rectennas for heat-to-electricity conversion. Graphene

Cite this

Half-volt operation of IGZO thin-film transistors enabled by ultrathin HfO₂ gate dielectric