Hall-effect measurements probing the degree of charge-carrier delocalization in solution-processed crystalline molecular semiconductors

Jui Fen Chang, Tomo Sakanoue, Yoann Olivier, Takafumi Uemura, Marie Beatrice Dufourg-Madec, Stephen G. Yeates, Jérôme Cornil, Jun Takeya, Alessandro Troisi, Henning Sirringhaus

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Intramolecular structure and intermolecular packing in crystalline molecular semiconductors should have profound effects on the charge-carrier wave function, but simple drift mobility measurements are not very sensitive to this. Here we show that differences in the Hall resistance of two soluble pentacene derivatives can be explained with different degrees of carrier delocalization being limited by thermal lattice fluctuations. A combination of Hall measurements, optical spectroscopy, and theoretical simulations provides a powerful probe of structure-property relationships at a molecular level. © 2011 American Physical Society.
    Original languageEnglish
    Article number066601
    JournalPhysical Review Letters
    Volume107
    Issue number6
    DOIs
    Publication statusPublished - 2 Aug 2011

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