Heterostructure and Q-factor Engineering for Low-threshold and Persistent Nanowire Lasing

Stefan Skalsky, Yunyan Zhang, Juan Arturo Alanis Azuara, H. Aruni Fonseka, Huiyun Liu, Patrick Parkinson

Research output: Contribution to journalArticlepeer-review


Continuous room-temperature nanowire lasing from silicon-integrated optoelectronic elements requires careful optimisation of both the lasing cavity Q-factor and population inversion conditions. We apply time-gated optical interferometry to the lasing emission from high-quality GaAsP/GaAs quantum well nanowire laser structures, revealing high-Q factors of 1250±90 corresponding to end-facet reflectivities of R= 0.73±0.02. By using optimised direct-indirect band alignment in the active region, we demonstrate a well-refilling mechanism providing a quasi-four-level system leading to multi-nanosecond lasing and record low room-temperature lasing thresholds (~ 6 μJcm-2pulse-1) for III-V nanowire lasers. Our findings demonstrate a highly promising new route towards continuously operating silicon-integrated nanolaser elements.
Original languageEnglish
JournalLight: Science & Applications
Early online date17 Mar 2020
Publication statusPublished - 2020


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