High capacitance dielectrics for low voltage operated OFETs

Navid Mohammadian, Leszek Majewski

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

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Abstract

Low-voltage, organic field-effect transistors (OFETs) have a high potential to be key components of low-cost, flexible, and large-area electronics. However, to be able to employ OFETs in the next generation of the electronic devices, the reduction of their operational voltage is urgently needed. Ideally, to be power efficient, OFETs are operated with gate voltages as low as possible. To fulfill this requirement, low values of transistor threshold voltage (Vt) and subthreshold swing (SS) are essential. Ideally, Vt should be around 0 V and SS close to 60 mV/dec, which is the theoretical limit of subthreshold swing at 300 K. This is a very challenging task as it requires the gate dielectric thickness to be reduced below 10 nm. Here, the most promising strategies toward high capacitance dielectrics for low voltage operated OFETs are covered and discussed.
Original languageEnglish
Title of host publicationIntegrated Circuits/Microchips
EditorsKim Ho Yeap, Muammar Mohamad Isa, Jonathan Sayago
Place of PublicationLondon
PublisherIntechOpen
Pages1-24
Number of pages24
ISBN (Electronic)978-1-83968-462-3
ISBN (Print)978-1-78985-930-0
DOIs
Publication statusPublished - 20 Mar 2020

Keywords

  • thin-film transistor (TFT)
  • organic field-effect transistor (OFET)
  • low voltage transistor operation
  • high gate capacitance
  • ultra-thin dielectric
  • high-k dielectric
  • high-k/low-k hybrid dielectric
  • self-assembled monolayer (SAM)
  • anodization

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