Abstract
A novel photolithographic technique using a periodic hexagonal close packed silver nanoparticle 2D array photo mask has been demonstrated to transfer a nano-pattern into a photoresist using G-I line proximity photolithography. This method can be made to precisely control the spacing between nanoparticles by using temperature. The high-density nanoparticle thin film is accomplished by self assembly through the Langmuir-Schaefer (LS) technique on a water surface and then transferring the particle monolayer to a temperature sensitive polymer membrane. A 30 nm hexagonal close packed silver nanoparticle 2D array pattern with a 50 nm period has been successfully transferred into S1813 photoresist using I-line exposure wavelength. The resultant feature sizes were 34 nm with a period of 46 nm, due to the surface plasmon resonance where the S1813 photoresist feature is approximately 11 times smaller than I-line exposure wavelength. © 2007 Elsevier B.V. All rights reserved.
Original language | English |
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Pages (from-to) | 486-491 |
Number of pages | 5 |
Journal | Microelectronic Engineering |
Volume | 85 |
Issue number | 2 |
DOIs | |
Publication status | Published - Feb 2008 |
Keywords
- Nanolithography
- Nanoparticle
- Self assembly
- Silver
- Surface plasmon resonance