High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires

Jessica L. Boland; Francesca Amaduzzi; Sabrina Sterzl; Heidi Potts; Laura M. Herz; Anna Fontcuberta i Morral; Michael B. Johnston

doi:10.1021/acs.nanolett.8b00842

High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires

Jessica L. Boland, Francesca Amaduzzi, Sabrina Sterzl, Heidi Potts, Laura M. Herz, Anna Fontcuberta i Morral, Michael B. Johnston

Oxford University

Research output: Contribution to journal › Article › peer-review

Abstract

InAsSb nanowires are promising elements for thermoelectric devices, infrared photodetectors, high-speed transistors, as well as thermophotovoltaic cells. By changing the Sb alloy fraction the mid-infrared bandgap energy and thermal conductivity may be tuned for specific device applications. Using both terahertz and Raman noncontact probes, we show that Sb alloying increases the electron mobility in the nanowires by over a factor of 3 from InAs to InAs0.65Sb0.35. We also extract the temperature-dependent electron mobility via both terahertz and Raman spectroscopy, and we report the highest electron mobilities for InAs0.65Sb0.35 nanowires to date, exceeding 16,000 cm2 V–1 s–1 at 10 K.

Original language	English
Pages (from-to)	3703-3710
Journal	Nano Letters
Volume	18
Issue number	6
Early online date	2 May 2018
DOIs	https://doi.org/10.1021/acs.nanolett.8b00842
Publication status	Published - Jun 2018

Keywords

InAsSb nanowires
quasi-pure-phase
Raman spectroscopy
THz spectroscopy
enhanced photoconductivity lifetimes
enhanced mobility

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1021/acs.nanolett.8b00842

https://ora.ox.ac.uk/objects/uuid:a9dabd02-be96-4f0d-8f7d-690b56ea69d2

Cite this

@article{65c94cc4e8684df6b720f5e64b01f896,

title = "High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires",

abstract = "InAsSb nanowires are promising elements for thermoelectric devices, infrared photodetectors, high-speed transistors, as well as thermophotovoltaic cells. By changing the Sb alloy fraction the mid-infrared bandgap energy and thermal conductivity may be tuned for specific device applications. Using both terahertz and Raman noncontact probes, we show that Sb alloying increases the electron mobility in the nanowires by over a factor of 3 from InAs to InAs0.65Sb0.35. We also extract the temperature-dependent electron mobility via both terahertz and Raman spectroscopy, and we report the highest electron mobilities for InAs0.65Sb0.35 nanowires to date, exceeding 16,000 cm2 V–1 s–1 at 10 K.",

keywords = "InAsSb nanowires, quasi-pure-phase, Raman spectroscopy, THz spectroscopy, enhanced photoconductivity lifetimes, enhanced mobility",

author = "Boland, \{Jessica L.\} and Francesca Amaduzzi and Sabrina Sterzl and Heidi Potts and Herz, \{Laura M.\} and \{Fontcuberta i Morral\}, Anna and Johnston, \{Michael B.\}",

year = "2018",

month = jun,

doi = "10.1021/acs.nanolett.8b00842",

language = "English",

volume = "18",

pages = "3703--3710",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "American Chemical Society",

number = "6",

}

TY - JOUR

T1 - High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires

AU - Boland, Jessica L.

AU - Amaduzzi, Francesca

AU - Sterzl, Sabrina

AU - Potts, Heidi

AU - Herz, Laura M.

AU - Fontcuberta i Morral, Anna

AU - Johnston, Michael B.

PY - 2018/6

Y1 - 2018/6

N2 - InAsSb nanowires are promising elements for thermoelectric devices, infrared photodetectors, high-speed transistors, as well as thermophotovoltaic cells. By changing the Sb alloy fraction the mid-infrared bandgap energy and thermal conductivity may be tuned for specific device applications. Using both terahertz and Raman noncontact probes, we show that Sb alloying increases the electron mobility in the nanowires by over a factor of 3 from InAs to InAs0.65Sb0.35. We also extract the temperature-dependent electron mobility via both terahertz and Raman spectroscopy, and we report the highest electron mobilities for InAs0.65Sb0.35 nanowires to date, exceeding 16,000 cm2 V–1 s–1 at 10 K.

AB - InAsSb nanowires are promising elements for thermoelectric devices, infrared photodetectors, high-speed transistors, as well as thermophotovoltaic cells. By changing the Sb alloy fraction the mid-infrared bandgap energy and thermal conductivity may be tuned for specific device applications. Using both terahertz and Raman noncontact probes, we show that Sb alloying increases the electron mobility in the nanowires by over a factor of 3 from InAs to InAs0.65Sb0.35. We also extract the temperature-dependent electron mobility via both terahertz and Raman spectroscopy, and we report the highest electron mobilities for InAs0.65Sb0.35 nanowires to date, exceeding 16,000 cm2 V–1 s–1 at 10 K.

KW - InAsSb nanowires

KW - quasi-pure-phase

KW - Raman spectroscopy

KW - THz spectroscopy

KW - enhanced photoconductivity lifetimes

KW - enhanced mobility

UR - https://www.scopus.com/pages/publications/85046683699

U2 - 10.1021/acs.nanolett.8b00842

DO - 10.1021/acs.nanolett.8b00842

M3 - Article

SN - 1530-6984

VL - 18

SP - 3703

EP - 3710

JO - Nano Letters

JF - Nano Letters

IS - 6

ER -

High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires

Abstract

Keywords

UN SDGs

Access to Document

Other files and links

Fingerprint

Unveiling Temperature-Dependent Scattering Mechanisms in Semiconductor Nanowires Using Optical-Pump Terahertz-Probe Spectroscopy

A journey in physics

Terahertz lights up the nanoscale:Revealing the nanoscale optoelectronic properties of low-dimensional materials via terahertz spectroscopy and microscopy.

Terahertz spectroscopy and microscopy for non-destructive nanoscale optoelectronic characterisation of advanced functional nanomaterials

Cite this

High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires

Abstract

Keywords

UN SDGs

Access to Document

Other files and links

Fingerprint

Research output

Unveiling Temperature-Dependent Scattering Mechanisms in Semiconductor Nanowires Using Optical-Pump Terahertz-Probe Spectroscopy

Activities

A journey in physics

Terahertz lights up the nanoscale:Revealing the nanoscale optoelectronic properties of low-dimensional materials via terahertz spectroscopy and microscopy.

Terahertz spectroscopy and microscopy for non-destructive nanoscale optoelectronic characterisation of advanced functional nanomaterials

Cite this