High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

Denis Bandurin; Anastasia Tyurnina; Geliang Yu; Artem Mishchenko; Viktor Zolyomi; Sergey Morozov; Roshan Krishna Kumar; Roman Gorbachev; Zakhar Kudrynskyi; Sergio Pezzini; Uli Zeitler; Konstantin Novoselov; Amalia Patane; Laurence Eaves; Irina Grigorieva; Vladimir Falko; Andre Geim; Yang Cao

doi:10.1038/nnano.2016.242

High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

Denis Bandurin, Anastasia Tyurnina, Geliang Yu, Artem Mishchenko, Viktor Zolyomi, Sergey Morozov, Roshan Krishna Kumar, Roman Gorbachev, Zakhar Kudrynskyi, Sergio Pezzini, Uli Zeitler, Konstantin Novoselov, Amalia Patane, Laurence Eaves, Irina Grigorieva, Vladimir Falko, Andre Geim, Yang Cao

Faculty of Science and Engineering

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Abstract

A decade of intense research on two‐dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum confinement and are most profound if the underlying lattice symmetry changes3,4. Here we report a high‐quality 2D electron gas in few‐layer
InSe encapsulated in hexagonal boron nitride under an inert atmosphere. Carrier mobilities are found to exceed 103 and 104 cm2/Vs at room and liquid‐helium temperatures, respectively, allowing the observation of the fully‐developed quantum Hall effect. The conduction electrons occupy a single 2D sub‐band and have a small effective mass. Photoluminescence spectroscopy reveals that the
bandgap increases by more than 0.5 eV with decreasing the thickness from bulk to bilayer InSe. The band‐edge optical response vanishes in monolayer InSe, which is attributed to monolayer’s mirrorplane symmetry. Encapsulated 2D InSe expands the family of graphene‐like semiconductors and, in terms of quality, is competitive with atomically‐thin dichalcogenides5,6,7 and black phosphorus

Original language	English
Pages (from-to)	223–227
Journal	Nature Nanotechnology
Volume	12
Early online date	21 Nov 2016
DOIs	https://doi.org/10.1038/nnano.2016.242
Publication status	Published - 21 Nov 2016

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Atomically thin InSe_arxivAccepted author manuscript, 1.28 MB

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Bandurin, D., Tyurnina, A., Yu, G., Mishchenko, A., Zolyomi, V., Morozov, S., Krishna Kumar, R., Gorbachev, R., Kudrynskyi, Z., Pezzini, S., Zeitler, U., Novoselov, K., Patane, A., Eaves, L., Grigorieva, I., Falko, V., Geim, A., & Cao, Y. (2016). High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe. Nature Nanotechnology, 12, 223–227. https://doi.org/10.1038/nnano.2016.242

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title = "High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe",

abstract = "A decade of intense research on two‐dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum confinement and are most profound if the underlying lattice symmetry changes3,4. Here we report a high‐quality 2D electron gas in few‐layerInSe encapsulated in hexagonal boron nitride under an inert atmosphere. Carrier mobilities are found to exceed 103 and 104 cm2/Vs at room and liquid‐helium temperatures, respectively, allowing the observation of the fully‐developed quantum Hall effect. The conduction electrons occupy a single 2D sub‐band and have a small effective mass. Photoluminescence spectroscopy reveals that thebandgap increases by more than 0.5 eV with decreasing the thickness from bulk to bilayer InSe. The band‐edge optical response vanishes in monolayer InSe, which is attributed to monolayer{\textquoteright}s mirrorplane symmetry. Encapsulated 2D InSe expands the family of graphene‐like semiconductors and, in terms of quality, is competitive with atomically‐thin dichalcogenides5,6,7 and black phosphorus",

author = "Denis Bandurin and Anastasia Tyurnina and Geliang Yu and Artem Mishchenko and Viktor Zolyomi and Sergey Morozov and {Krishna Kumar}, Roshan and Roman Gorbachev and Zakhar Kudrynskyi and Sergio Pezzini and Uli Zeitler and Konstantin Novoselov and Amalia Patane and Laurence Eaves and Irina Grigorieva and Vladimir Falko and Andre Geim and Yang Cao",

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Bandurin, D, Tyurnina, A, Yu, G, Mishchenko, A, Zolyomi, V, Morozov, S, Krishna Kumar, R, Gorbachev, R, Kudrynskyi, Z, Pezzini, S, Zeitler, U, Novoselov, K, Patane, A, Eaves, L, Grigorieva, I , Falko, V, Geim, A & Cao, Y 2016, 'High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe', Nature Nanotechnology, vol. 12, pp. 223–227. https://doi.org/10.1038/nnano.2016.242

TY - JOUR

T1 - High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

AU - Bandurin, Denis

AU - Tyurnina, Anastasia

AU - Yu, Geliang

AU - Mishchenko, Artem

AU - Zolyomi, Viktor

AU - Morozov, Sergey

AU - Krishna Kumar, Roshan

AU - Gorbachev, Roman

AU - Kudrynskyi, Zakhar

AU - Pezzini, Sergio

AU - Zeitler, Uli

AU - Novoselov, Konstantin

AU - Patane, Amalia

AU - Eaves, Laurence

AU - Grigorieva, Irina

AU - Falko, Vladimir

AU - Geim, Andre

AU - Cao, Yang

PY - 2016/11/21

Y1 - 2016/11/21

N2 - A decade of intense research on two‐dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum confinement and are most profound if the underlying lattice symmetry changes3,4. Here we report a high‐quality 2D electron gas in few‐layerInSe encapsulated in hexagonal boron nitride under an inert atmosphere. Carrier mobilities are found to exceed 103 and 104 cm2/Vs at room and liquid‐helium temperatures, respectively, allowing the observation of the fully‐developed quantum Hall effect. The conduction electrons occupy a single 2D sub‐band and have a small effective mass. Photoluminescence spectroscopy reveals that thebandgap increases by more than 0.5 eV with decreasing the thickness from bulk to bilayer InSe. The band‐edge optical response vanishes in monolayer InSe, which is attributed to monolayer’s mirrorplane symmetry. Encapsulated 2D InSe expands the family of graphene‐like semiconductors and, in terms of quality, is competitive with atomically‐thin dichalcogenides5,6,7 and black phosphorus

AB - A decade of intense research on two‐dimensional (2D) atomic crystals has revealed that their properties can differ greatly from those of the parent compound. These differences are governed by changes in the band structure due to quantum confinement and are most profound if the underlying lattice symmetry changes3,4. Here we report a high‐quality 2D electron gas in few‐layerInSe encapsulated in hexagonal boron nitride under an inert atmosphere. Carrier mobilities are found to exceed 103 and 104 cm2/Vs at room and liquid‐helium temperatures, respectively, allowing the observation of the fully‐developed quantum Hall effect. The conduction electrons occupy a single 2D sub‐band and have a small effective mass. Photoluminescence spectroscopy reveals that thebandgap increases by more than 0.5 eV with decreasing the thickness from bulk to bilayer InSe. The band‐edge optical response vanishes in monolayer InSe, which is attributed to monolayer’s mirrorplane symmetry. Encapsulated 2D InSe expands the family of graphene‐like semiconductors and, in terms of quality, is competitive with atomically‐thin dichalcogenides5,6,7 and black phosphorus

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DO - 10.1038/nnano.2016.242

M3 - Letter

SN - 1748-3387

VL - 12

SP - 223

EP - 227

JO - Nature Nanotechnology

JF - Nature Nanotechnology

ER -

High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe

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