High-energy ion-implantation of a moderately deep acceptor Hg into liquid encapsulated Czochralski grown GaAs: formation of new shallow emission bands

K. Harada; Y. Makita; H. Shibata; B. Lo; A. C. Beye; M. P. Halsall; S. Kimura; N. Kobayashi; T. Iida; T. Shima; A. Obara

High-energy ion-implantation of a moderately deep acceptor Hg into liquid encapsulated Czochralski grown GaAs: formation of new shallow emission bands

K. Harada, Y. Makita, H. Shibata, B. Lo, A. C. Beye, M. P. Halsall, S. Kimura, N. Kobayashi, T. Iida, T. Shima, A. Obara

Research output: Contribution to journal › Article › peer-review

Abstract

Hg (mercury) in GaAs is known to be a moderately deep acceptor impurity, having a 52 meV activation energy. Optical properties of Hg acceptors in GaAs were systematically investigated as a function of Hg concentration, [Hg]. Samples were prepared by high-energy ion-implantation of Hg+ into GaAs grown by the liquid encapsulated Czochralski (LEC) method. Heat treatment was made by furnace annealing and rapid thermal annealing. Photoluminescence measurements at 2K revealed that the Hg-related so-called 'g' line is formed in addition to the well-defined conduction band-to-Hg acceptor transition, (e, Hg). Additionally, three shallow emissions are formed for net hole concentrations |NA-ND| greater than 2×1017 cm-3. This is the first demonstration that even Hg in GaAs makes multiple shallow emissions due to acceptor-acceptor pairs and LEC GaAs can be used for the investigations of these emissions.

Original language	English
Pages (from-to)	835-840
Number of pages	5
Journal	Materials Research Society Symposium Proceedings
Volume	396
Publication status	Published - 1996

Cite this

@article{9cd8e34341d54b93b815b795c8c08370,

title = "High-energy ion-implantation of a moderately deep acceptor Hg into liquid encapsulated Czochralski grown GaAs: formation of new shallow emission bands",

abstract = "Hg (mercury) in GaAs is known to be a moderately deep acceptor impurity, having a 52 meV activation energy. Optical properties of Hg acceptors in GaAs were systematically investigated as a function of Hg concentration, [Hg]. Samples were prepared by high-energy ion-implantation of Hg+ into GaAs grown by the liquid encapsulated Czochralski (LEC) method. Heat treatment was made by furnace annealing and rapid thermal annealing. Photoluminescence measurements at 2K revealed that the Hg-related so-called 'g' line is formed in addition to the well-defined conduction band-to-Hg acceptor transition, (e, Hg). Additionally, three shallow emissions are formed for net hole concentrations |NA-ND| greater than 2×1017 cm-3. This is the first demonstration that even Hg in GaAs makes multiple shallow emissions due to acceptor-acceptor pairs and LEC GaAs can be used for the investigations of these emissions.",

author = "K. Harada and Y. Makita and H. Shibata and B. Lo and Beye, {A. C.} and Halsall, {M. P.} and S. Kimura and N. Kobayashi and T. Iida and T. Shima and A. Obara",

year = "1996",

language = "English",

volume = "396",

pages = "835--840",

journal = "Materials Research Society Symposium Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - High-energy ion-implantation of a moderately deep acceptor Hg into liquid encapsulated Czochralski grown GaAs: formation of new shallow emission bands

AU - Harada, K.

AU - Makita, Y.

AU - Shibata, H.

AU - Lo, B.

AU - Beye, A. C.

AU - Halsall, M. P.

AU - Kimura, S.

AU - Kobayashi, N.

AU - Iida, T.

AU - Shima, T.

AU - Obara, A.

PY - 1996

Y1 - 1996

N2 - Hg (mercury) in GaAs is known to be a moderately deep acceptor impurity, having a 52 meV activation energy. Optical properties of Hg acceptors in GaAs were systematically investigated as a function of Hg concentration, [Hg]. Samples were prepared by high-energy ion-implantation of Hg+ into GaAs grown by the liquid encapsulated Czochralski (LEC) method. Heat treatment was made by furnace annealing and rapid thermal annealing. Photoluminescence measurements at 2K revealed that the Hg-related so-called 'g' line is formed in addition to the well-defined conduction band-to-Hg acceptor transition, (e, Hg). Additionally, three shallow emissions are formed for net hole concentrations |NA-ND| greater than 2×1017 cm-3. This is the first demonstration that even Hg in GaAs makes multiple shallow emissions due to acceptor-acceptor pairs and LEC GaAs can be used for the investigations of these emissions.

AB - Hg (mercury) in GaAs is known to be a moderately deep acceptor impurity, having a 52 meV activation energy. Optical properties of Hg acceptors in GaAs were systematically investigated as a function of Hg concentration, [Hg]. Samples were prepared by high-energy ion-implantation of Hg+ into GaAs grown by the liquid encapsulated Czochralski (LEC) method. Heat treatment was made by furnace annealing and rapid thermal annealing. Photoluminescence measurements at 2K revealed that the Hg-related so-called 'g' line is formed in addition to the well-defined conduction band-to-Hg acceptor transition, (e, Hg). Additionally, three shallow emissions are formed for net hole concentrations |NA-ND| greater than 2×1017 cm-3. This is the first demonstration that even Hg in GaAs makes multiple shallow emissions due to acceptor-acceptor pairs and LEC GaAs can be used for the investigations of these emissions.

M3 - Article

SN - 0272-9172

VL - 396

SP - 835

EP - 840

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

ER -

High-energy ion-implantation of a moderately deep acceptor Hg into liquid encapsulated Czochralski grown GaAs: formation of new shallow emission bands

Abstract

Fingerprint

Cite this