High-Performance Ga2O3 Diode Based on Tin Oxide Schottky Contact

Lulu Du; Qian Xin; Mingsheng Xu; Yaxuan Liu; Wenxiang Mu; Shiqi Yan; Xinyu Wang; Gongming Xin; Zhitai Jia; Xu-tang Tao; Aimin Song

doi:10.1109/LED.2019.2893633

High-Performance Ga2O3 Diode Based on Tin Oxide Schottky Contact

Lulu Du, Qian Xin, Mingsheng Xu, Yaxuan Liu, Wenxiang Mu, Shiqi Yan, Xinyu Wang, Gongming Xin, Zhitai Jia, Xu-tang Tao, Aimin Song

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Abstract

A high-performance Schottky diode based on a 600-μm-thick Cr-doped β-Ga2O3 single crystal has been fabricated using SnOx as the Schottky contact. The SnOx film was deposited in argon/oxygen mixture gas to ensure an oxygen-rich stoichiometry in Ga2O3 near the Schottky interface, thus reducing oxygen deficiency related interface state density. The SnOx film included three components: Sn, SnO, and SnO2, as revealed by X-ray photoelectron spectroscopy characterization. The high quality Ga2O3 single crystal grown by an edge-defined film-fed method has a carrier concentration of 1.0 × 1018 cm-3 and an electron mobility of ~90 cm2/Vs. Current density-voltage characteristics of the Schottky diode demonstrated high performance with a large barrier height of 1.17 eV, a close-to-unity ideality factor of 1.02, and a high rectification ratio beyond 1010. Frequency-dependent capacitance and conductance analysis revealed that the maximum active interface state density is 5.92 × 1013 at a frequency of 7 kHz.

Original language	English
Pages (from-to)	1-1
Journal	IEEE Electron Device Letters
Early online date	21 Jan 2019
DOIs	https://doi.org/10.1109/LED.2019.2893633
Publication status	Published - 2019

Keywords

Ga2O3
Schottky barrier diodes (SBDs)
tin oxide (SnOx).

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@article{6c2f09ec157b4b08b5536d760569c01c,

title = "High-Performance Ga2O3 Diode Based on Tin Oxide Schottky Contact",

abstract = "A high-performance Schottky diode based on a 600-μm-thick Cr-doped β-Ga2O3 single crystal has been fabricated using SnOx as the Schottky contact. The SnOx film was deposited in argon/oxygen mixture gas to ensure an oxygen-rich stoichiometry in Ga2O3 near the Schottky interface, thus reducing oxygen deficiency related interface state density. The SnOx film included three components: Sn, SnO, and SnO2, as revealed by X-ray photoelectron spectroscopy characterization. The high quality Ga2O3 single crystal grown by an edge-defined film-fed method has a carrier concentration of 1.0 × 1018 cm-3 and an electron mobility of ~90 cm2/Vs. Current density-voltage characteristics of the Schottky diode demonstrated high performance with a large barrier height of 1.17 eV, a close-to-unity ideality factor of 1.02, and a high rectification ratio beyond 1010. Frequency-dependent capacitance and conductance analysis revealed that the maximum active interface state density is 5.92 × 1013 at a frequency of 7 kHz.",

keywords = "Ga2O3, Schottky barrier diodes (SBDs), tin oxide (SnOx).",

author = "Lulu Du and Qian Xin and Mingsheng Xu and Yaxuan Liu and Wenxiang Mu and Shiqi Yan and Xinyu Wang and Gongming Xin and Zhitai Jia and Xu-tang Tao and Aimin Song",

year = "2019",

doi = "10.1109/LED.2019.2893633",

language = "English",

pages = "1--1",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "IEEE",

}

TY - JOUR

T1 - High-Performance Ga2O3 Diode Based on Tin Oxide Schottky Contact

AU - Du, Lulu

AU - Xin, Qian

AU - Xu, Mingsheng

AU - Liu, Yaxuan

AU - Mu, Wenxiang

AU - Yan, Shiqi

AU - Wang, Xinyu

AU - Xin, Gongming

AU - Jia, Zhitai

AU - Tao, Xu-tang

AU - Song, Aimin

PY - 2019

Y1 - 2019

N2 - A high-performance Schottky diode based on a 600-μm-thick Cr-doped β-Ga2O3 single crystal has been fabricated using SnOx as the Schottky contact. The SnOx film was deposited in argon/oxygen mixture gas to ensure an oxygen-rich stoichiometry in Ga2O3 near the Schottky interface, thus reducing oxygen deficiency related interface state density. The SnOx film included three components: Sn, SnO, and SnO2, as revealed by X-ray photoelectron spectroscopy characterization. The high quality Ga2O3 single crystal grown by an edge-defined film-fed method has a carrier concentration of 1.0 × 1018 cm-3 and an electron mobility of ~90 cm2/Vs. Current density-voltage characteristics of the Schottky diode demonstrated high performance with a large barrier height of 1.17 eV, a close-to-unity ideality factor of 1.02, and a high rectification ratio beyond 1010. Frequency-dependent capacitance and conductance analysis revealed that the maximum active interface state density is 5.92 × 1013 at a frequency of 7 kHz.

AB - A high-performance Schottky diode based on a 600-μm-thick Cr-doped β-Ga2O3 single crystal has been fabricated using SnOx as the Schottky contact. The SnOx film was deposited in argon/oxygen mixture gas to ensure an oxygen-rich stoichiometry in Ga2O3 near the Schottky interface, thus reducing oxygen deficiency related interface state density. The SnOx film included three components: Sn, SnO, and SnO2, as revealed by X-ray photoelectron spectroscopy characterization. The high quality Ga2O3 single crystal grown by an edge-defined film-fed method has a carrier concentration of 1.0 × 1018 cm-3 and an electron mobility of ~90 cm2/Vs. Current density-voltage characteristics of the Schottky diode demonstrated high performance with a large barrier height of 1.17 eV, a close-to-unity ideality factor of 1.02, and a high rectification ratio beyond 1010. Frequency-dependent capacitance and conductance analysis revealed that the maximum active interface state density is 5.92 × 1013 at a frequency of 7 kHz.

KW - Ga2O3

KW - Schottky barrier diodes (SBDs)

KW - tin oxide (SnOx).

U2 - 10.1109/LED.2019.2893633

DO - 10.1109/LED.2019.2893633

M3 - Article

SN - 0741-3106

SP - 1

EP - 1

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

ER -

High-Performance Ga2O3 Diode Based on Tin Oxide Schottky Contact

Abstract

Keywords

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