High-performance multipulse rectifier with single-transistor active injection

Ismael Araujo-Vargas; Andrew J. Forsyth; F. Javier Chivite-Zabalza

doi:10.1109/TPEL.2008.920882

High-performance multipulse rectifier with single-transistor active injection

Ismael Araujo-Vargas, Andrew J. Forsyth, F. Javier Chivite-Zabalza

Research output: Contribution to journal › Article › peer-review

Abstract

A three-phase, multilevel rectifier using active voltage injection with one MOSFET device is presented. The injector consists of a bidirectional switch that modifies the behavior of a 12-pulse rectifier resulting in either 24-pulse or multilevel pulsewidth-modulated (PWM) operation. The resultant input currents are almost sinusoidal, the line current THD being 2.36% for 24-pulse operation and 1.06% for PWM operation. The MOSFET current is 2.9% of the load current. The circuit operation, idealized waveforms and modulation strategy are explained and experimental results are presented. © 2008 IEEE.

Original language	English
Pages (from-to)	1299-1308
Number of pages	9
Journal	IEEE Transactions on Power Electronics
Volume	23
Issue number	3
DOIs	https://doi.org/10.1109/TPEL.2008.920882
Publication status	Published - May 2008

Keywords

High-power factor rectification
Three-phase multipulse rectifier

Access to Document

10.1109/TPEL.2008.920882

Cite this

@article{f5a46a446b2c4a14bc9db114da963403,

title = "High-performance multipulse rectifier with single-transistor active injection",

abstract = "A three-phase, multilevel rectifier using active voltage injection with one MOSFET device is presented. The injector consists of a bidirectional switch that modifies the behavior of a 12-pulse rectifier resulting in either 24-pulse or multilevel pulsewidth-modulated (PWM) operation. The resultant input currents are almost sinusoidal, the line current THD being 2.36% for 24-pulse operation and 1.06% for PWM operation. The MOSFET current is 2.9% of the load current. The circuit operation, idealized waveforms and modulation strategy are explained and experimental results are presented. {\textcopyright} 2008 IEEE.",

keywords = "High-power factor rectification, Three-phase multipulse rectifier",

author = "Ismael Araujo-Vargas and Forsyth, {Andrew J.} and Chivite-Zabalza, {F. Javier}",

year = "2008",

month = may,

doi = "10.1109/TPEL.2008.920882",

language = "English",

volume = "23",

pages = "1299--1308",

journal = "IEEE Transactions on Power Electronics",

issn = "0885-8993",

publisher = "IEEE",

number = "3",

}

TY - JOUR

T1 - High-performance multipulse rectifier with single-transistor active injection

AU - Araujo-Vargas, Ismael

AU - Forsyth, Andrew J.

AU - Chivite-Zabalza, F. Javier

PY - 2008/5

Y1 - 2008/5

N2 - A three-phase, multilevel rectifier using active voltage injection with one MOSFET device is presented. The injector consists of a bidirectional switch that modifies the behavior of a 12-pulse rectifier resulting in either 24-pulse or multilevel pulsewidth-modulated (PWM) operation. The resultant input currents are almost sinusoidal, the line current THD being 2.36% for 24-pulse operation and 1.06% for PWM operation. The MOSFET current is 2.9% of the load current. The circuit operation, idealized waveforms and modulation strategy are explained and experimental results are presented. © 2008 IEEE.

AB - A three-phase, multilevel rectifier using active voltage injection with one MOSFET device is presented. The injector consists of a bidirectional switch that modifies the behavior of a 12-pulse rectifier resulting in either 24-pulse or multilevel pulsewidth-modulated (PWM) operation. The resultant input currents are almost sinusoidal, the line current THD being 2.36% for 24-pulse operation and 1.06% for PWM operation. The MOSFET current is 2.9% of the load current. The circuit operation, idealized waveforms and modulation strategy are explained and experimental results are presented. © 2008 IEEE.

KW - High-power factor rectification

KW - Three-phase multipulse rectifier

U2 - 10.1109/TPEL.2008.920882

DO - 10.1109/TPEL.2008.920882

M3 - Article

SN - 0885-8993

VL - 23

SP - 1299

EP - 1308

JO - IEEE Transactions on Power Electronics

JF - IEEE Transactions on Power Electronics

IS - 3

ER -

High-performance multipulse rectifier with single-transistor active injection

Abstract

Keywords

Access to Document

Fingerprint

Cite this