High-performance organic transistors using solution-processed nanoparticle-filled high-k polymer gate insulators

High-performance organic transistors with high-capacitance insulators were produced by filing a polymeric gate insulator with BaTiO3 nanoparticles. The use of poly(vinyl alcohol)-copolumer aqueous solution with dispersed nanoparticles allowed the materials to be deposited using solution-processing techniques and yielded dielectric constants. The dielectric constants can be varied by varying the solution and deposition parameters. The results show that the mobility of the pentaceene semiconductor does not suffer very much from the more polar gate insulator, due to high degree of coverage of the nanoparticles with the less polar polymer.