High performance thin film IGZO Schottky diodes with sputtered PdOx anode

Shiqi Yan; Yiming Wang; Jiawei Zhang; Qian Xin; Aimin Song

High performance thin film IGZO Schottky diodes with sputtered PdOx anode

Shiqi Yan, Yiming Wang, Jiawei Zhang, Qian Xin, Aimin Song

EEE - Academic & Research

Shandong University

Research output: Contribution to journal › Article › peer-review

Abstract

Thin film Schottky barrier diodes (SBDs) based on amorphous oxide semiconductors play an important role in flexible and wearable electronics. In this work, thin film SBDs based on indium-gallium-zinc-oxide (InGaZnO or IGZO) were fabricated with sputtered PdOx/Pd top Schottky contact and low temperature (100 ℃ ) annealing in air atmosphere. The PdOx produces an oxygen-rich stoichiometry in the Schottky interface, resulting in high quality contact with rather low interface trap state density of 2.6×1017 cm-3 and extremely low barrier inhomogeneity of 0.01 eV. As a result, high performance IGZO SBDs were achieved with high on/off ratio of 3×107, near-unity ideality factor of 1.04, barrier height of 0.85 eV, high on-current density of 2.5 A·cm-2 at 1 V, and high reverse breakdown voltage of ~12 V.

Original language	English
Journal	IEEE Transactions on Electron Devices
Publication status	Accepted/In press - 1 Jul 2021

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Embargo ends: 1/01/31

Nano-rectennas for heat-to-electricity conversion. Graphene
Song, A. (PI) & Hill, E. (CoI)
1/04/16 → 7/08/19
Project: Research

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@article{50f80c71ccdf4b668bd4d30db1b0178f,

title = "High performance thin film IGZO Schottky diodes with sputtered PdOx anode",

abstract = "Thin film Schottky barrier diodes (SBDs) based on amorphous oxide semiconductors play an important role in flexible and wearable electronics. In this work, thin film SBDs based on indium-gallium-zinc-oxide (InGaZnO or IGZO) were fabricated with sputtered PdOx/Pd top Schottky contact and low temperature (100 ℃ ) annealing in air atmosphere. The PdOx produces an oxygen-rich stoichiometry in the Schottky interface, resulting in high quality contact with rather low interface trap state density of 2.6×1017 cm-3 and extremely low barrier inhomogeneity of 0.01 eV. As a result, high performance IGZO SBDs were achieved with high on/off ratio of 3×107, near-unity ideality factor of 1.04, barrier height of 0.85 eV, high on-current density of 2.5 A·cm-2 at 1 V, and high reverse breakdown voltage of ~12 V.",

author = "Shiqi Yan and Yiming Wang and Jiawei Zhang and Qian Xin and Aimin Song",

year = "2021",

month = jul,

day = "1",

language = "English",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "IEEE",

}

TY - JOUR

T1 - High performance thin film IGZO Schottky diodes with sputtered PdOx anode

AU - Yan, Shiqi

AU - Wang, Yiming

AU - Zhang, Jiawei

AU - Xin, Qian

AU - Song, Aimin

PY - 2021/7/1

Y1 - 2021/7/1

N2 - Thin film Schottky barrier diodes (SBDs) based on amorphous oxide semiconductors play an important role in flexible and wearable electronics. In this work, thin film SBDs based on indium-gallium-zinc-oxide (InGaZnO or IGZO) were fabricated with sputtered PdOx/Pd top Schottky contact and low temperature (100 ℃ ) annealing in air atmosphere. The PdOx produces an oxygen-rich stoichiometry in the Schottky interface, resulting in high quality contact with rather low interface trap state density of 2.6×1017 cm-3 and extremely low barrier inhomogeneity of 0.01 eV. As a result, high performance IGZO SBDs were achieved with high on/off ratio of 3×107, near-unity ideality factor of 1.04, barrier height of 0.85 eV, high on-current density of 2.5 A·cm-2 at 1 V, and high reverse breakdown voltage of ~12 V.

AB - Thin film Schottky barrier diodes (SBDs) based on amorphous oxide semiconductors play an important role in flexible and wearable electronics. In this work, thin film SBDs based on indium-gallium-zinc-oxide (InGaZnO or IGZO) were fabricated with sputtered PdOx/Pd top Schottky contact and low temperature (100 ℃ ) annealing in air atmosphere. The PdOx produces an oxygen-rich stoichiometry in the Schottky interface, resulting in high quality contact with rather low interface trap state density of 2.6×1017 cm-3 and extremely low barrier inhomogeneity of 0.01 eV. As a result, high performance IGZO SBDs were achieved with high on/off ratio of 3×107, near-unity ideality factor of 1.04, barrier height of 0.85 eV, high on-current density of 2.5 A·cm-2 at 1 V, and high reverse breakdown voltage of ~12 V.

M3 - Article

SN - 0018-9383

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

ER -

High performance thin film IGZO Schottky diodes with sputtered PdOx anode

Abstract

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Nano-rectennas for heat-to-electricity conversion. Graphene

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