High performance thin film IGZO Schottky diodes with sputtered PdOx anode

Shiqi Yan, Yiming Wang, Jiawei Zhang, Qian Xin, Aimin Song

Research output: Contribution to journalArticlepeer-review


Thin film Schottky barrier diodes (SBDs) based on amorphous oxide semiconductors play an important role in flexible and wearable electronics. In this work, thin film SBDs based on indium-gallium-zinc-oxide (InGaZnO or IGZO) were fabricated with sputtered PdOx/Pd top Schottky contact and low temperature (100 ℃ ) annealing in air atmosphere. The PdOx produces an oxygen-rich stoichiometry in the Schottky interface, resulting in high quality contact with rather low interface trap state density of 2.6×1017 cm-3 and extremely low barrier inhomogeneity of 0.01 eV. As a result, high performance IGZO SBDs were achieved with high on/off ratio of 3×107, near-unity ideality factor of 1.04, barrier height of 0.85 eV, high on-current density of 2.5 A·cm-2 at 1 V, and high reverse breakdown voltage of ~12 V.
Original languageEnglish
JournalIEEE Transactions on Electron Devices
Publication statusAccepted/In press - 1 Jul 2021


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