High photoluminescence efficiency III-nitride based quantum well structures emitting at 380 nm

D. M. Graham; P. Dawson; D. Zhu; M. J. Kappers; C. McAleese; N. P. Hylton; G. R. Chabrol; C. J. Humphreys

doi:10.1063/1.2729910

High photoluminescence efficiency III-nitride based quantum well structures emitting at 380 nm

D. M. Graham, P. Dawson, D. Zhu, M. J. Kappers, C. McAleese, N. P. Hylton, G. R. Chabrol, C. J. Humphreys

Research output: Chapter in Book/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper we show that by using InxGa1-xN/AlInGaN quantum wells, with values of x of 0.08 and narrow quantum wells in the range 2.4 to 1.5 nm, it is possible to achieve very high room temperature photoluminescence quantum efficiencies. The key factors in the design are high barriers, exciton localization and a fast radiative recombination rate. Specifically the structure with the well width of 1.5 nm has a measured efficiency of 0.63. © 2007 American Institute of Physics.

Original language	English
Title of host publication	AIP Conference Proceedings\|AIP Conf. Proc.
Place of Publication	AIP Conference Proceedings
Publisher	American Institute of Physics
Pages	347-348
Number of pages	1
Volume	893
ISBN (Print)	9780735403970
DOIs	https://doi.org/10.1063/1.2729910
Publication status	Published - 2007
Event	28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna Duration: 1 Jul 2007 → …

Conference

Conference	28th International Conference on the Physics of Semiconductors, ICPS 2006
City	Vienna
Period	1/07/07 → …

Keywords

Indium gallium nitride
Photoluminescence
UV emission

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10.1063/1.2729910

Cite this

@inproceedings{1a99ec408f2b479cb4cb2c1fe7704d02,

title = "High photoluminescence efficiency III-nitride based quantum well structures emitting at 380 nm",

abstract = "In this paper we show that by using InxGa1-xN/AlInGaN quantum wells, with values of x of 0.08 and narrow quantum wells in the range 2.4 to 1.5 nm, it is possible to achieve very high room temperature photoluminescence quantum efficiencies. The key factors in the design are high barriers, exciton localization and a fast radiative recombination rate. Specifically the structure with the well width of 1.5 nm has a measured efficiency of 0.63. {\textcopyright} 2007 American Institute of Physics.",

keywords = "Indium gallium nitride, Photoluminescence, UV emission",

author = "Graham, {D. M.} and P. Dawson and D. Zhu and Kappers, {M. J.} and C. McAleese and Hylton, {N. P.} and Chabrol, {G. R.} and Humphreys, {C. J.}",

year = "2007",

doi = "10.1063/1.2729910",

language = "English",

isbn = "9780735403970",

volume = "893",

pages = "347--348",

booktitle = "AIP Conference Proceedings|AIP Conf. Proc.",

publisher = "American Institute of Physics",

address = "United States",

note = "28th International Conference on the Physics of Semiconductors, ICPS 2006 ; Conference date: 01-07-2007",

}

Graham, DM, Dawson, P, Zhu, D, Kappers, MJ, McAleese, C, Hylton, NP, Chabrol, GR & Humphreys, CJ 2007, High photoluminescence efficiency III-nitride based quantum well structures emitting at 380 nm. in AIP Conference Proceedings|AIP Conf. Proc.. vol. 893, American Institute of Physics, AIP Conference Proceedings, pp. 347-348, 28th International Conference on the Physics of Semiconductors, ICPS 2006, Vienna, 1/07/07. https://doi.org/10.1063/1.2729910

TY - GEN

T1 - High photoluminescence efficiency III-nitride based quantum well structures emitting at 380 nm

AU - Graham, D. M.

AU - Dawson, P.

AU - Zhu, D.

AU - Kappers, M. J.

AU - McAleese, C.

AU - Hylton, N. P.

AU - Chabrol, G. R.

AU - Humphreys, C. J.

PY - 2007

Y1 - 2007

N2 - In this paper we show that by using InxGa1-xN/AlInGaN quantum wells, with values of x of 0.08 and narrow quantum wells in the range 2.4 to 1.5 nm, it is possible to achieve very high room temperature photoluminescence quantum efficiencies. The key factors in the design are high barriers, exciton localization and a fast radiative recombination rate. Specifically the structure with the well width of 1.5 nm has a measured efficiency of 0.63. © 2007 American Institute of Physics.

AB - In this paper we show that by using InxGa1-xN/AlInGaN quantum wells, with values of x of 0.08 and narrow quantum wells in the range 2.4 to 1.5 nm, it is possible to achieve very high room temperature photoluminescence quantum efficiencies. The key factors in the design are high barriers, exciton localization and a fast radiative recombination rate. Specifically the structure with the well width of 1.5 nm has a measured efficiency of 0.63. © 2007 American Institute of Physics.

KW - Indium gallium nitride

KW - Photoluminescence

KW - UV emission

U2 - 10.1063/1.2729910

DO - 10.1063/1.2729910

M3 - Conference contribution

SN - 9780735403970

VL - 893

SP - 347

EP - 348

BT - AIP Conference Proceedings|AIP Conf. Proc.

PB - American Institute of Physics

CY - AIP Conference Proceedings

T2 - 28th International Conference on the Physics of Semiconductors, ICPS 2006

Y2 - 1 July 2007

ER -

High photoluminescence efficiency III-nitride based quantum well structures emitting at 380 nm

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