High photoluminescence efficiency III-nitride based quantum well structures emitting at 380 nm

D. M. Graham, P. Dawson, D. Zhu, M. J. Kappers, C. McAleese, N. P. Hylton, G. R. Chabrol, C. J. Humphreys

    Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

    Abstract

    In this paper we show that by using InxGa1-xN/AlInGaN quantum wells, with values of x of 0.08 and narrow quantum wells in the range 2.4 to 1.5 nm, it is possible to achieve very high room temperature photoluminescence quantum efficiencies. The key factors in the design are high barriers, exciton localization and a fast radiative recombination rate. Specifically the structure with the well width of 1.5 nm has a measured efficiency of 0.63. © 2007 American Institute of Physics.
    Original languageEnglish
    Title of host publicationAIP Conference Proceedings|AIP Conf. Proc.
    Place of PublicationAIP Conference Proceedings
    PublisherAmerican Institute of Physics
    Pages347-348
    Number of pages1
    Volume893
    ISBN (Print)9780735403970
    DOIs
    Publication statusPublished - 2007
    Event28th International Conference on the Physics of Semiconductors, ICPS 2006 - Vienna
    Duration: 1 Jul 2007 → …

    Conference

    Conference28th International Conference on the Physics of Semiconductors, ICPS 2006
    CityVienna
    Period1/07/07 → …

    Keywords

    • Indium gallium nitride
    • Photoluminescence
    • UV emission

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