High Power Broadband Graphene Non-Foster Circuit Enabled Class-J GaN HEMT Power Amplifier

Charles Nwakanma Akwuruoha, Zhirun Hu

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    lass‐J GaN HEMT power amplifier (PA). A graphene resonant‐tunneling diode (RTD) NFC is proposed to provide negative differential resistance characteristics and to create an effective negative capacitance. The NFC is integrated in the input matching network of the Class‐J GaN HEMT PA to cancel out the transistor input parasitic capacitance so as to enhance PA bandwidth, efficiency, output power, and gain. The PA design is based on Cree's packaged GaN HEMT CGHV40030F biased with drain supply voltage of 50 V at quiescent drain‐to‐source current of 44 mA. The PA operates from 3.4 to 4.0 GHz with center frequency of 3.7 GHz. The effective negative capacitance of the NFC from 3.4 to 4.0 GHz stands at −3.3 to −6.0 pF. An effective capacitance of −3.7 pF has been obtained at 3.7 GHz. The PA has small signal gain of 16.1 dB at 3.7 GHz. Large signal simulation input power sweep from 1 to 33 dBm at 3.7 GHz, indicates that the PA has 57.8% drain efficiency, 54.7% power added efficiency (PAE), 44.6 dBm (28.8 W) output power and 11.6 dB transducer power gain at input power of 33 dBm.
    Original languageEnglish
    JournalMicrowave and Optical Technology Letters
    Early online date10 Oct 2018
    Publication statusPublished - 2018


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