High resistivity annealed low-temperature GaAs with 100 fs lifetimes

I. S. Gregory; C. Baker; W. R. Tribe; M. J. Evans; H. E. Beere; E. H. Linfield; A. G. Davies; M. Missous

doi:10.1063/1.1628389

High resistivity annealed low-temperature GaAs with 100 fs lifetimes

I. S. Gregory^*, C. Baker, W. R. Tribe, M. J. Evans, H. E. Beere, E. H. Linfield, A. G. Davies, M. Missous

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

We demonstrate the critical effect of postgrowth annealing temperature on the properties of low-temperature-grown GaAs. By using annealing temperatures substantially below the 500–600 °C commonly reported, GaAs with high resistivity and with carrier lifetimes as short as 100 fs can be routinely obtained. We discuss the optimum, but different, anneal conditions required for terahertz photoconductive emitters and detectors, and illustrate their use in a continuous-wave system.

Original language	English
Pages (from-to)	4199-4201
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	20
DOIs	https://doi.org/10.1063/1.1628389
Publication status	Published - 17 Nov 2003

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abstract = "We demonstrate the critical effect of postgrowth annealing temperature on the properties of low-temperature-grown GaAs. By using annealing temperatures substantially below the 500–600 °C commonly reported, GaAs with high resistivity and with carrier lifetimes as short as 100 fs can be routinely obtained. We discuss the optimum, but different, anneal conditions required for terahertz photoconductive emitters and detectors, and illustrate their use in a continuous-wave system.",

author = "Gregory, {I. S.} and C. Baker and Tribe, {W. R.} and Evans, {M. J.} and Beere, {H. E.} and Linfield, {E. H.} and Davies, {A. G.} and M. Missous",

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AU - Gregory, I. S.

AU - Baker, C.

AU - Tribe, W. R.

AU - Evans, M. J.

AU - Beere, H. E.

AU - Linfield, E. H.

AU - Davies, A. G.

AU - Missous, M.

PY - 2003/11/17

Y1 - 2003/11/17

N2 - We demonstrate the critical effect of postgrowth annealing temperature on the properties of low-temperature-grown GaAs. By using annealing temperatures substantially below the 500–600 °C commonly reported, GaAs with high resistivity and with carrier lifetimes as short as 100 fs can be routinely obtained. We discuss the optimum, but different, anneal conditions required for terahertz photoconductive emitters and detectors, and illustrate their use in a continuous-wave system.

AB - We demonstrate the critical effect of postgrowth annealing temperature on the properties of low-temperature-grown GaAs. By using annealing temperatures substantially below the 500–600 °C commonly reported, GaAs with high resistivity and with carrier lifetimes as short as 100 fs can be routinely obtained. We discuss the optimum, but different, anneal conditions required for terahertz photoconductive emitters and detectors, and illustrate their use in a continuous-wave system.

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U2 - 10.1063/1.1628389

DO - 10.1063/1.1628389

M3 - Article

AN - SCOPUS:0347410954

SN - 0003-6951

VL - 83

SP - 4199

EP - 4201

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

High resistivity annealed low-temperature GaAs with 100 fs lifetimes

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