High resistivity annealed low-temperature GaAs with 100 fs lifetimes

I. S. Gregory, C. Baker, W. R. Tribe, M. J. Evans, H. E. Beere, E. H. Linfield, A. G. Davies, M. Missous

Research output: Contribution to journalArticlepeer-review

Abstract

We demonstrate the critical effect of postgrowth annealing temperature on the properties of low-temperature-grown GaAs. By using annealing temperatures substantially below the 500–600 °C commonly reported, GaAs with high resistivity and with carrier lifetimes as short as 100 fs can be routinely obtained. We discuss the optimum, but different, anneal conditions required for terahertz photoconductive emitters and detectors, and illustrate their use in a continuous-wave system.
Original languageEnglish
Pages (from-to)4199-4201
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number20
DOIs
Publication statusPublished - 17 Nov 2003

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