High resolution DLTS of hydrogen reactions with defects in erbium-implanted silicon

High resolution Laplace Deep Level Transient Spectroscopy (LDLTS) has been applied to n and p type silicon implanted with low doses of either erbium or silicon, and spectra are compared to those from electron irradiated silicon. Hydrogen has been introduced by wet chemical etching. Prior to annealing n-type electron irradiated Si exhibits the deep level VOH at E_C - 311 meV, but in the ion implanted n-type Si this peak is largely obscured in DLTS by a defect peak at E_C - 400 meV. LDLTS overcomes this problem and shows that VOH is present in the n-type Si implanted Si, but not in Er implanted Si. In the Er implanted samples, defect migration is occurring beyond the implanted ion range, and in the p-type Er implanted Si hydrogen passivates the divacancy and the C_IO_I defect. The passivation of the latter state is not stable, and the C_IO_I deep state starts to re-appear after a 1 h anneal at 320 K.