High resolution Laplace DLTS studies of defects in ion-implanted silicon

J. H. Evans-Freeman; N. Abdelgader; P. Y. Y. Kan; A. R. Peaker

doi:10.1016/S0168-583X(01)00870-9

High resolution Laplace DLTS studies of defects in ion-implanted silicon

J. H. Evans-Freeman, N. Abdelgader, P. Y. Y. Kan, A. R. Peaker

UMIST

Research output: Contribution to journal › Article › peer-review

Abstract

We have used high resolution Laplace deep level transient spectroscopy (LDLTS) to investigate defects in n-type silicon caused by implantation of Si, Ge or Er with doses of the order of 1 × 10⁹ cm^-2. These are compared with defects created in proton irradiated n-type silicon. Unlike the simple proton irradiated case, LDLTS spectra of ion implanted silicon show that there are many emission rates associated with defects with energies in the region of E_c - 400 meV. We have carried out annealing studies and Laplace DLTS depth profiling and show that the complex spectra measured from a region less than half way through the implant simplify as the profile is moved through the implant and towards the tail. Annealing studies show that these defects survive an anneal that should remove the E-centre.

Original language	English
Pages (from-to)	41-45
Number of pages	5
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	186
Issue number	1-4
DOIs	https://doi.org/10.1016/S0168-583X(01)00870-9
Publication status	Published - Jan 2002

Keywords

Defects
Interstitials
Ion implantation
Laplace DLTS
Silicon
Vacancies

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10.1016/S0168-583X(01)00870-9

Cite this

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title = "High resolution Laplace DLTS studies of defects in ion-implanted silicon",

abstract = "We have used high resolution Laplace deep level transient spectroscopy (LDLTS) to investigate defects in n-type silicon caused by implantation of Si, Ge or Er with doses of the order of 1 × 109 cm-2. These are compared with defects created in proton irradiated n-type silicon. Unlike the simple proton irradiated case, LDLTS spectra of ion implanted silicon show that there are many emission rates associated with defects with energies in the region of Ec - 400 meV. We have carried out annealing studies and Laplace DLTS depth profiling and show that the complex spectra measured from a region less than half way through the implant simplify as the profile is moved through the implant and towards the tail. Annealing studies show that these defects survive an anneal that should remove the E-centre.",

keywords = "Defects, Interstitials, Ion implantation, Laplace DLTS, Silicon, Vacancies",

author = "Evans-Freeman, {J. H.} and N. Abdelgader and Kan, {P. Y. Y.} and Peaker, {A. R.}",

year = "2002",

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T1 - High resolution Laplace DLTS studies of defects in ion-implanted silicon

AU - Evans-Freeman, J. H.

AU - Abdelgader, N.

AU - Kan, P. Y. Y.

AU - Peaker, A. R.

PY - 2002/1

Y1 - 2002/1

N2 - We have used high resolution Laplace deep level transient spectroscopy (LDLTS) to investigate defects in n-type silicon caused by implantation of Si, Ge or Er with doses of the order of 1 × 109 cm-2. These are compared with defects created in proton irradiated n-type silicon. Unlike the simple proton irradiated case, LDLTS spectra of ion implanted silicon show that there are many emission rates associated with defects with energies in the region of Ec - 400 meV. We have carried out annealing studies and Laplace DLTS depth profiling and show that the complex spectra measured from a region less than half way through the implant simplify as the profile is moved through the implant and towards the tail. Annealing studies show that these defects survive an anneal that should remove the E-centre.

AB - We have used high resolution Laplace deep level transient spectroscopy (LDLTS) to investigate defects in n-type silicon caused by implantation of Si, Ge or Er with doses of the order of 1 × 109 cm-2. These are compared with defects created in proton irradiated n-type silicon. Unlike the simple proton irradiated case, LDLTS spectra of ion implanted silicon show that there are many emission rates associated with defects with energies in the region of Ec - 400 meV. We have carried out annealing studies and Laplace DLTS depth profiling and show that the complex spectra measured from a region less than half way through the implant simplify as the profile is moved through the implant and towards the tail. Annealing studies show that these defects survive an anneal that should remove the E-centre.

KW - Defects

KW - Interstitials

KW - Ion implantation

KW - Laplace DLTS

KW - Silicon

KW - Vacancies

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U2 - 10.1016/S0168-583X(01)00870-9

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SN - 0168-583X

VL - 186

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - 1-4

ER -

High resolution Laplace DLTS studies of defects in ion-implanted silicon

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