High-sensitivity photodetectors based on multilayer GaTe flakes

Fucai Liu, Hidekazu Shimotani, Hui Shang, Thangavel Kanagasekaran, Viktor Zólyomi, Neil Drummond, Vladimir I. Fal'Ko, Katsumi Tanigaki

    Research output: Contribution to journalArticlepeer-review

    Abstract

    Optoelectronic devices based on layered materials such as graphene have resulted in significant interest due to their unique properties and potential technological applications. The electric and optoelectronic properties of nano GaTe flakes as layered materials are described in this article. The transistor fabricated from multilayer GaTe shows a p-type action with a hole mobility of about 0.2 cm2 V-1 s-1. The gate transistor exhibits a high photoresponsivity of 104 A/W, which is greatly better than that of graphene, MoS2, and other layered compounds. Meanwhile, the response speed of 6 ms is also very fast. Both the high photoresponsivity and the fast response time described in the present study strongly suggest that multilayer GaTe is a promising candidate for future optoelectronic and photosensitive device applications.

    Original languageEnglish
    Pages (from-to)752-760
    Number of pages9
    JournalACS Nano
    Volume8
    Issue number1
    Early online date23 Dec 2013
    DOIs
    Publication statusPublished - 28 Jan 2014

    Keywords

    • gallium telluride
    • layered material
    • photodetector
    • responsivity
    • transistor

    Research Beacons, Institutes and Platforms

    • National Graphene Institute

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