TY - JOUR
T1 - Highly Optimized Complementary Inverters Based on p-SnO and n-InGaZnO With High Uniformity
AU - Yang, Jin
AU - Wang, Yiming
AU - Li, Yunpeng
AU - Yuan, Yuzhuo
AU - Hu, Zhenjia
AU - Ma, Pengfei
AU - Zhou, Li
AU - Qingpu Wang,
AU - Song, Aimin
AU - Qian Xin,
N1 - Funding Information:
Manuscript received February 15, 2018; accepted February 22, 2018. Date of publication February 27, 2018; date of current version March 22, 2018. This work was supported in part by the National Key Research and Development Program of China under Grant 2016YFA0301200 and Grant 2016YFA0201800, in part by the National Natural Science Foundation of China under Grant 11374185, in part by the Engineering and Physical Sciences Research Council under Grant EP/N021258/1, in part by the China Postdoctoral Science Foundation Funded Project under Grant 2016M590634, in part by the Key Research and Development Program of Shandong Province under Grant 2017GGX10111 and Grant 2017GGX10121, in part by the Natural Science Foundation of Jiangsu Province under Grant BK20151255, in part by the Suzhou Planning Projects of Science and Technology under Grant SYG201527 and Grant SYG201616, and in part by the Fundamental Research Funds of Shandong University under Grant 2016WLJH44. The review of this letter was arranged by Editor S. Hall. (Jin Yang and Yiming Wang are co-first authors.) (Corresponding author: Qian Xin.) J. Yang, Y. Wang, Y. Li, Y. Yuan, Z. Hu, P. Ma, L. Zhou, Q. Wang, and Q. Xin are with the State Key Laboratory of Crystal Materials, Centre of Nanoelectronics, and School of Microelectronics, Shandong University, Jinan 250100, China (e-mail: [email protected]).
Publisher Copyright:
© 1980-2012 IEEE.
PY - 2018/4
Y1 - 2018/4
N2 - Oxide semiconductors are desirable for large-area and/or flexible electronics. Here, we report highly optimized complementary inverters based on n-type indium-gallium-zinc oxide and p-type tin monoxide thin-film transistors. Oxide-based inverters with a record voltage gain of 142 have been achieved. The switching point voltage has also been tuned to reach the ideal value, namely half value of the supply voltage. A narrow transition width of 1.04 V (13% of the supply voltage) is achieved which offers a strong anti-jamming ability to avoid logic errors. Rail-to-rail output voltage swing has been achieved. The inverters still maintain high performance at a low supply voltage of 6 V. A very large number of inverters have been fabricated and showed excellent uniformity in a working area of 1 cm. The switching point voltage and transition width show very small standard deviations of only 0.55% (0.022 V) and 2.3% (0.024 V), respectively, demonstrating promises for large-scale circuit integration.
AB - Oxide semiconductors are desirable for large-area and/or flexible electronics. Here, we report highly optimized complementary inverters based on n-type indium-gallium-zinc oxide and p-type tin monoxide thin-film transistors. Oxide-based inverters with a record voltage gain of 142 have been achieved. The switching point voltage has also been tuned to reach the ideal value, namely half value of the supply voltage. A narrow transition width of 1.04 V (13% of the supply voltage) is achieved which offers a strong anti-jamming ability to avoid logic errors. Rail-to-rail output voltage swing has been achieved. The inverters still maintain high performance at a low supply voltage of 6 V. A very large number of inverters have been fabricated and showed excellent uniformity in a working area of 1 cm. The switching point voltage and transition width show very small standard deviations of only 0.55% (0.022 V) and 2.3% (0.024 V), respectively, demonstrating promises for large-scale circuit integration.
KW - Complementary inverter
KW - indium gallium zinc oxide (IGZO)
KW - noise margin
KW - static voltage gain
KW - thin-film transistor (TFT)
KW - tin monoxide (SnO)
KW - uniformity
UR - https://doi.org/10.1109/LED.2018.2809796
UR - http://www.scopus.com/inward/record.url?scp=85042710817&partnerID=8YFLogxK
UR - http://www.mendeley.com/research/highly-optimized-complementary-inverters-based-psno-ningazno-high-uniformity-1
U2 - 10.1109/LED.2018.2809796
DO - 10.1109/LED.2018.2809796
M3 - Article
SN - 0741-3106
VL - 39
SP - 516
EP - 519
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 4
ER -