Highly sensitive nano Tesla Quantum Well Hall Effect Integrated Circuit using GaAs-InGaAs-AlGaAs 2DEG

M. Sadeghi, J. Sexton, C. Liang, M. Missous

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@article{ae187aef291c406c8b548d31ea25374e,

title = "Highly sensitive nano Tesla Quantum Well Hall Effect Integrated Circuit using GaAs-InGaAs-AlGaAs 2DEG",

author = "M. Sadeghi and J. Sexton and C. Liang and M. Missous",

year = "2015",

month = mar,

doi = "10.1109/JSEN.2014.2368074",

language = "English",

volume = "15",

pages = "1817 -- 1824",

journal = "IEEE Sensors Journal",

issn = "2379-9153",

publisher = "IEEE",

number = "3",

}

TY - JOUR

T1 - Highly sensitive nano Tesla Quantum Well Hall Effect Integrated Circuit using GaAs-InGaAs-AlGaAs 2DEG

AU - Sadeghi, M.

AU - Sexton, J.

AU - Liang, C.

AU - Missous, M.

PY - 2015/3

Y1 - 2015/3

U2 - 10.1109/JSEN.2014.2368074

DO - 10.1109/JSEN.2014.2368074

M3 - Article

SN - 2379-9153

VL - 15

SP - 1817

EP - 1824

JO - IEEE Sensors Journal

JF - IEEE Sensors Journal

IS - 3

ER -