Highly Strained III-V-V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement

Yunyan Zhang, George Davis, H. Aruni Fonseka, Anton Velichko, Anders Gustafsson, Tillmann Godde, Dhruv Saxena, Martin Aagesen, Patrick W. Parkinson, James A. Gott, Suguo Huo, Ana M. Sanchez, David J. Mowbray, Huiyun Liu

    Research output: Contribution to journalArticlepeer-review


    Coaxial quantum wells (QWs) are ideal candidates for nanowire (NW) lasers, providing strong carrier confinement and allowing close matching of the cavity mode and gain medium. We report a detailed structural and optical study and the observation of lasing for a mixed group-V GaAsP NW with GaAs QWs. This system offers a number of potential advantages in comparison to previously studied common group-V structures (e.g., AlGaAs/GaAs) including highly strained binary GaAs QWs, the absence of a lower band gap core region, and deep carrier potential wells. Despite the large lattice mismatch (∼1.7%), it is possible to grow defect-free GaAs coaxial QWs with high optical quality. The large band gap difference results in strong carrier confinement, and the ability to apply a high degree of compressive strain to the GaAs QWs is also expected to be beneficial for laser performance. For a non-fully optimized structure containing three QWs, we achieve low-temperature lasing with a low external (internal) threshold of 20 (0.9) μJ/cm2/pulse. In addition, a very narrow lasing line width of ∼0.15 nm is observed. These results extend the NW laser structure to coaxial III-V-V QWs, which are highly suitable as the platform for NW emitters.

    Original languageEnglish
    Pages (from-to)5931-5938
    Number of pages8
    JournalACS Nano
    Issue number5
    Publication statusPublished - 28 May 2019


    • carrier collection
    • carrier confinement
    • III-V-V
    • laser
    • nanowire
    • quantum well


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