Highly Strained III-V-V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement

Yunyan Zhang; George Davis; H. Aruni Fonseka; Anton Velichko; Anders Gustafsson; Tillmann Godde; Dhruv Saxena; Martin Aagesen; Patrick W. Parkinson; James A. Gott; Suguo Huo; Ana M. Sanchez; David J. Mowbray; Huiyun Liu

doi:10.1021/acsnano.9b01775

Highly Strained III-V-V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement

Yunyan Zhang, George Davis, H. Aruni Fonseka, Anton Velichko, Anders Gustafsson, Tillmann Godde, Dhruv Saxena, Martin Aagesen, Patrick W. Parkinson, James A. Gott, Suguo Huo, Ana M. Sanchez, David J. Mowbray, Huiyun Liu

Research output: Contribution to journal › Article › peer-review

Abstract

Coaxial quantum wells (QWs) are ideal candidates for nanowire (NW) lasers, providing strong carrier confinement and allowing close matching of the cavity mode and gain medium. We report a detailed structural and optical study and the observation of lasing for a mixed group-V GaAsP NW with GaAs QWs. This system offers a number of potential advantages in comparison to previously studied common group-V structures (e.g., AlGaAs/GaAs) including highly strained binary GaAs QWs, the absence of a lower band gap core region, and deep carrier potential wells. Despite the large lattice mismatch (∼1.7%), it is possible to grow defect-free GaAs coaxial QWs with high optical quality. The large band gap difference results in strong carrier confinement, and the ability to apply a high degree of compressive strain to the GaAs QWs is also expected to be beneficial for laser performance. For a non-fully optimized structure containing three QWs, we achieve low-temperature lasing with a low external (internal) threshold of 20 (0.9) μJ/cm²/pulse. In addition, a very narrow lasing line width of ∼0.15 nm is observed. These results extend the NW laser structure to coaxial III-V-V QWs, which are highly suitable as the platform for NW emitters.

Original language	English
Pages (from-to)	5931-5938
Number of pages	8
Journal	ACS Nano
Volume	13
Issue number	5
DOIs	https://doi.org/10.1021/acsnano.9b01775
Publication status	Published - 28 May 2019

Keywords

carrier collection
carrier confinement
III-V-V
laser
nanowire
quantum well

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@article{cd95a116bacb4547933fdade125bd6fe,

title = "Highly Strained III-V-V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement",

abstract = "Coaxial quantum wells (QWs) are ideal candidates for nanowire (NW) lasers, providing strong carrier confinement and allowing close matching of the cavity mode and gain medium. We report a detailed structural and optical study and the observation of lasing for a mixed group-V GaAsP NW with GaAs QWs. This system offers a number of potential advantages in comparison to previously studied common group-V structures (e.g., AlGaAs/GaAs) including highly strained binary GaAs QWs, the absence of a lower band gap core region, and deep carrier potential wells. Despite the large lattice mismatch (∼1.7%), it is possible to grow defect-free GaAs coaxial QWs with high optical quality. The large band gap difference results in strong carrier confinement, and the ability to apply a high degree of compressive strain to the GaAs QWs is also expected to be beneficial for laser performance. For a non-fully optimized structure containing three QWs, we achieve low-temperature lasing with a low external (internal) threshold of 20 (0.9) μJ/cm2/pulse. In addition, a very narrow lasing line width of ∼0.15 nm is observed. These results extend the NW laser structure to coaxial III-V-V QWs, which are highly suitable as the platform for NW emitters.",

keywords = "carrier collection, carrier confinement, III-V-V, laser, nanowire, quantum well",

author = "Yunyan Zhang and George Davis and Fonseka, {H. Aruni} and Anton Velichko and Anders Gustafsson and Tillmann Godde and Dhruv Saxena and Martin Aagesen and Parkinson, {Patrick W.} and Gott, {James A.} and Suguo Huo and Sanchez, {Ana M.} and Mowbray, {David J.} and Huiyun Liu",

year = "2019",

month = may,

day = "28",

doi = "10.1021/acsnano.9b01775",

language = "English",

volume = "13",

pages = "5931--5938",

journal = "ACS Nano",

issn = "1936-0851",

publisher = "American Chemical Society",

number = "5",

}

TY - JOUR

T1 - Highly Strained III-V-V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement

AU - Zhang, Yunyan

AU - Davis, George

AU - Fonseka, H. Aruni

AU - Velichko, Anton

AU - Gustafsson, Anders

AU - Godde, Tillmann

AU - Saxena, Dhruv

AU - Aagesen, Martin

AU - Parkinson, Patrick W.

AU - Gott, James A.

AU - Huo, Suguo

AU - Sanchez, Ana M.

AU - Mowbray, David J.

AU - Liu, Huiyun

PY - 2019/5/28

Y1 - 2019/5/28

N2 - Coaxial quantum wells (QWs) are ideal candidates for nanowire (NW) lasers, providing strong carrier confinement and allowing close matching of the cavity mode and gain medium. We report a detailed structural and optical study and the observation of lasing for a mixed group-V GaAsP NW with GaAs QWs. This system offers a number of potential advantages in comparison to previously studied common group-V structures (e.g., AlGaAs/GaAs) including highly strained binary GaAs QWs, the absence of a lower band gap core region, and deep carrier potential wells. Despite the large lattice mismatch (∼1.7%), it is possible to grow defect-free GaAs coaxial QWs with high optical quality. The large band gap difference results in strong carrier confinement, and the ability to apply a high degree of compressive strain to the GaAs QWs is also expected to be beneficial for laser performance. For a non-fully optimized structure containing three QWs, we achieve low-temperature lasing with a low external (internal) threshold of 20 (0.9) μJ/cm2/pulse. In addition, a very narrow lasing line width of ∼0.15 nm is observed. These results extend the NW laser structure to coaxial III-V-V QWs, which are highly suitable as the platform for NW emitters.

AB - Coaxial quantum wells (QWs) are ideal candidates for nanowire (NW) lasers, providing strong carrier confinement and allowing close matching of the cavity mode and gain medium. We report a detailed structural and optical study and the observation of lasing for a mixed group-V GaAsP NW with GaAs QWs. This system offers a number of potential advantages in comparison to previously studied common group-V structures (e.g., AlGaAs/GaAs) including highly strained binary GaAs QWs, the absence of a lower band gap core region, and deep carrier potential wells. Despite the large lattice mismatch (∼1.7%), it is possible to grow defect-free GaAs coaxial QWs with high optical quality. The large band gap difference results in strong carrier confinement, and the ability to apply a high degree of compressive strain to the GaAs QWs is also expected to be beneficial for laser performance. For a non-fully optimized structure containing three QWs, we achieve low-temperature lasing with a low external (internal) threshold of 20 (0.9) μJ/cm2/pulse. In addition, a very narrow lasing line width of ∼0.15 nm is observed. These results extend the NW laser structure to coaxial III-V-V QWs, which are highly suitable as the platform for NW emitters.

KW - carrier collection

KW - carrier confinement

KW - III-V-V

KW - laser

KW - nanowire

KW - quantum well

U2 - 10.1021/acsnano.9b01775

DO - 10.1021/acsnano.9b01775

M3 - Article

C2 - 31067033

AN - SCOPUS:85066852615

SN - 1936-0851

VL - 13

SP - 5931

EP - 5938

JO - ACS Nano

JF - ACS Nano

IS - 5

ER -

Highly Strained III-V-V Coaxial Nanowire Quantum Wells with Strong Carrier Confinement

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Keywords

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