Highly 28Si Enriched Silicon by Localised Focused Ion Beam Implantation

Ravi Acharya; Maddison Coke; Mason Adshead; Kexue Li; Barat Achinuq; Rongsheng Cai; A. Baset Gholizadeh; Janet Jacobs; Jessica L. Boland; Sarah J. Haigh; Katie L. Moore; David N. Jamieson; Richard J. Curry

doi:10.1038/s43246-024-00498-0

Highly ²⁸Si Enriched Silicon by Localised Focused Ion Beam Implantation

Ravi Acharya^*, Maddison Coke, Mason Adshead, Kexue Li, Barat Achinuq, Rongsheng Cai, A. Baset Gholizadeh, Janet Jacobs, Jessica L. Boland, Sarah J. Haigh, Katie L. Moore, David N. Jamieson, Richard J. Curry^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

Solid-state spin qubits within silicon crystals at mK temperatures show great promise in the realisation of a fully scalable quantum computation platform. Qubit coherence times are limited in natural silicon owing to coupling to the ²⁹Si isotope which has a non-zero nuclear spin. This work presents a method for the depletion of ²⁹Si in localised volumes of natural silicon wafers by irradiation using a ₄₅ keV ²⁸Si focused ion beam with fluences above 1×10¹⁹ ions cm⁻². Nanoscale secondary ion mass spectrometry analysis of the irradiated volumes shows residual ²⁹Si concentration down to 2.3 ± 0.7 ppm and with residual C and O comparable to the background concentration in the unimplanted wafer. After annealing, transmission electron microscopy lattice images confirm the solid phase epitaxial re-crystallization of the as-implanted amorphous enriched volume extending over 200 nm in depth.

Original language	English
Article number	57
Journal	Communications Materials
Volume	5
Issue number	1
DOIs	https://doi.org/10.1038/s43246-024-00498-0
Publication status	Published - 7 May 2024

Research Beacons, Institutes and Platforms

National Graphene Institute
Henry Royce Institute

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10.1038/s43246-024-00498-0

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title = "Highly 28Si Enriched Silicon by Localised Focused Ion Beam Implantation",

abstract = "Solid-state spin qubits within silicon crystals at mK temperatures show great promise in the realisation of a fully scalable quantum computation platform. Qubit coherence times are limited in natural silicon owing to coupling to the 29Si isotope which has a non-zero nuclear spin. This work presents a method for the depletion of 29Si in localised volumes of natural silicon wafers by irradiation using a 45 keV 28Si focused ion beam with fluences above 1×1019 ions cm−2. Nanoscale secondary ion mass spectrometry analysis of the irradiated volumes shows residual 29Si concentration down to 2.3 ± 0.7 ppm and with residual C and O comparable to the background concentration in the unimplanted wafer. After annealing, transmission electron microscopy lattice images confirm the solid phase epitaxial re-crystallization of the as-implanted amorphous enriched volume extending over 200 nm in depth.",

author = "Ravi Acharya and Maddison Coke and Mason Adshead and Kexue Li and Barat Achinuq and Rongsheng Cai and Gholizadeh, {A. Baset} and Janet Jacobs and Boland, {Jessica L.} and Haigh, {Sarah J.} and Moore, {Katie L.} and Jamieson, {David N.} and Curry, {Richard J.}",

note = "Publisher Copyright: {\textcopyright} The Author(s) 2024.",

year = "2024",

month = may,

day = "7",

doi = "10.1038/s43246-024-00498-0",

language = "English",

volume = "5",

journal = "Communications Materials",

issn = "2662-4443",

publisher = "Springer Nature",

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T1 - Highly 28Si Enriched Silicon by Localised Focused Ion Beam Implantation

AU - Acharya, Ravi

AU - Coke, Maddison

AU - Adshead, Mason

AU - Li, Kexue

AU - Achinuq, Barat

AU - Cai, Rongsheng

AU - Gholizadeh, A. Baset

AU - Jacobs, Janet

AU - Boland, Jessica L.

AU - Haigh, Sarah J.

AU - Moore, Katie L.

AU - Jamieson, David N.

AU - Curry, Richard J.

PY - 2024/5/7

Y1 - 2024/5/7

N2 - Solid-state spin qubits within silicon crystals at mK temperatures show great promise in the realisation of a fully scalable quantum computation platform. Qubit coherence times are limited in natural silicon owing to coupling to the 29Si isotope which has a non-zero nuclear spin. This work presents a method for the depletion of 29Si in localised volumes of natural silicon wafers by irradiation using a 45 keV 28Si focused ion beam with fluences above 1×1019 ions cm−2. Nanoscale secondary ion mass spectrometry analysis of the irradiated volumes shows residual 29Si concentration down to 2.3 ± 0.7 ppm and with residual C and O comparable to the background concentration in the unimplanted wafer. After annealing, transmission electron microscopy lattice images confirm the solid phase epitaxial re-crystallization of the as-implanted amorphous enriched volume extending over 200 nm in depth.

AB - Solid-state spin qubits within silicon crystals at mK temperatures show great promise in the realisation of a fully scalable quantum computation platform. Qubit coherence times are limited in natural silicon owing to coupling to the 29Si isotope which has a non-zero nuclear spin. This work presents a method for the depletion of 29Si in localised volumes of natural silicon wafers by irradiation using a 45 keV 28Si focused ion beam with fluences above 1×1019 ions cm−2. Nanoscale secondary ion mass spectrometry analysis of the irradiated volumes shows residual 29Si concentration down to 2.3 ± 0.7 ppm and with residual C and O comparable to the background concentration in the unimplanted wafer. After annealing, transmission electron microscopy lattice images confirm the solid phase epitaxial re-crystallization of the as-implanted amorphous enriched volume extending over 200 nm in depth.

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DO - 10.1038/s43246-024-00498-0

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SN - 2662-4443

VL - 5

JO - Communications Materials

JF - Communications Materials

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ER -

Highly ²⁸Si Enriched Silicon by Localised Focused Ion Beam Implantation

Abstract

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NAME

Terahertz, Topology, Technology: Realising the potential of nanoscale Dirac materials using near-field terahertz spectroscopy

Cryogenic Ultrafast Scattering-type Terahertz-probe Optical-pump Microscopy (CUSTOM)

Nanoscale Secondary Ion Mass Spectrometry (NanoSIMS)

PNAME system

Surface Characterisation

Cite this

Highly 28Si Enriched Silicon by Localised Focused Ion Beam Implantation

Abstract

Research Beacons, Institutes and Platforms

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NAME

Terahertz, Topology, Technology: Realising the potential of nanoscale Dirac materials using near-field terahertz spectroscopy

Cryogenic Ultrafast Scattering-type Terahertz-probe Optical-pump Microscopy (CUSTOM)

Equipment

Nanoscale Secondary Ion Mass Spectrometry (NanoSIMS)

PNAME system

Surface Characterisation

Cite this

Highly ²⁸Si Enriched Silicon by Localised Focused Ion Beam Implantation