Hole capture at the DX(Si) and DX(Te) defects in AlxGa 1-xAs

L. Dobaczewski, P. Kaczor, Z. R. Zytkiewicz, M. Missous, F. Saleemi, P. Dawson, A. R. Peaker

Research output: Contribution to journalArticlepeer-review

Abstract

Results of measurements of the hole recombination process at DX centers related to group-IV (silicon) and group-VI (tellurium) donor elements in Al xGa1-xAs are presented. For the DX(Si) and DX(Te) defects the values of hole capture cross section σh=2×10 -13 and σh=10-13 cm2 were found, respectively. In both cases no systematic change of σh with temperature was observed. The results show that the DX center in the ground state is negatively charged as a consequence of its negative-U two-electron character.

Original languageEnglish
Pages (from-to)3198-3200
Number of pages3
JournalJournal of Applied Physics
Volume72
Issue number7
DOIs
Publication statusPublished - 1 Dec 1992

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