Hole capture at the DX(Si) and DX(Te) defects in AlxGa 1-xAs

L. Dobaczewski; P. Kaczor; Z. R. Zytkiewicz; M. Missous; F. Saleemi; P. Dawson; A. R. Peaker

doi:10.1063/1.351483

Hole capture at the DX(Si) and DX(Te) defects in Al_xGa _1-xAs

L. Dobaczewski^*, P. Kaczor, Z. R. Zytkiewicz, M. Missous, F. Saleemi, P. Dawson, A. R. Peaker

^*Corresponding author for this work

EEE - Academic & Research

Research output: Contribution to journal › Article › peer-review

Abstract

Results of measurements of the hole recombination process at DX centers related to group-IV (silicon) and group-VI (tellurium) donor elements in Al _xGa_1-xAs are presented. For the DX(Si) and DX(Te) defects the values of hole capture cross section σ_h=2×10 ^-13 and σ_h=10^-13 cm² were found, respectively. In both cases no systematic change of σ_h with temperature was observed. The results show that the DX center in the ground state is negatively charged as a consequence of its negative-U two-electron character.

Original language	English
Pages (from-to)	3198-3200
Number of pages	3
Journal	Journal of Applied Physics
Volume	72
Issue number	7
DOIs	https://doi.org/10.1063/1.351483
Publication status	Published - 1 Dec 1992

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title = "Hole capture at the DX(Si) and DX(Te) defects in AlxGa 1-xAs",

abstract = "Results of measurements of the hole recombination process at DX centers related to group-IV (silicon) and group-VI (tellurium) donor elements in Al xGa1-xAs are presented. For the DX(Si) and DX(Te) defects the values of hole capture cross section σh=2×10 -13 and σh=10-13 cm2 were found, respectively. In both cases no systematic change of σh with temperature was observed. The results show that the DX center in the ground state is negatively charged as a consequence of its negative-U two-electron character.",

author = "L. Dobaczewski and P. Kaczor and Zytkiewicz, {Z. R.} and M. Missous and F. Saleemi and P. Dawson and Peaker, {A. R.}",

year = "1992",

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doi = "10.1063/1.351483",

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T1 - Hole capture at the DX(Si) and DX(Te) defects in AlxGa 1-xAs

AU - Dobaczewski, L.

AU - Kaczor, P.

AU - Zytkiewicz, Z. R.

AU - Missous, M.

AU - Saleemi, F.

AU - Dawson, P.

AU - Peaker, A. R.

PY - 1992/12/1

Y1 - 1992/12/1

N2 - Results of measurements of the hole recombination process at DX centers related to group-IV (silicon) and group-VI (tellurium) donor elements in Al xGa1-xAs are presented. For the DX(Si) and DX(Te) defects the values of hole capture cross section σh=2×10 -13 and σh=10-13 cm2 were found, respectively. In both cases no systematic change of σh with temperature was observed. The results show that the DX center in the ground state is negatively charged as a consequence of its negative-U two-electron character.

AB - Results of measurements of the hole recombination process at DX centers related to group-IV (silicon) and group-VI (tellurium) donor elements in Al xGa1-xAs are presented. For the DX(Si) and DX(Te) defects the values of hole capture cross section σh=2×10 -13 and σh=10-13 cm2 were found, respectively. In both cases no systematic change of σh with temperature was observed. The results show that the DX center in the ground state is negatively charged as a consequence of its negative-U two-electron character.

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U2 - 10.1063/1.351483

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M3 - Article

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SN - 0021-8979

VL - 72

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EP - 3200

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

ER -

Hole capture at the DX(Si) and DX(Te) defects in Al_xGa _1-xAs

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