TY - JOUR
T1 - Hole-conductor free ambient processed mixed halide perovskite solar cells
AU - Maniyarasu, Suresh
AU - Rajbhar, Manoj Kumar
AU - Dileep, Reshma K
AU - Ramasamy, Easwaramoorthi
AU - Veerappan, Ganapathy
PY - 2019
Y1 - 2019
N2 - In the past several years, organic-inorganic halide based perovskites has become an exciting topic in the field of photovoltaic community. Conventional perovskite solar cells (PSC) use 2,2′,7,7′-Tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9′-spirobifluorene (spiro-OMeTAD) as a hole transporting layer (HTL), but the cost and stability of the polymeric HTL affects the scaling-up of PSC. This work, reports a hole- conductor free-ambient processed mixed halide PSCs with promising efficiency by tuning the morphology of the perovskite films by employing different deposition techniques (one step, two-step and dip coating method). In the dip coating method, unique cuboid structured films with good absorption and pin hole free films were obtained. The photovoltaic performances of the devices made by various deposition methods were measured at 1 sun illumination under standard conditions and achieved upto 6.5%.
AB - In the past several years, organic-inorganic halide based perovskites has become an exciting topic in the field of photovoltaic community. Conventional perovskite solar cells (PSC) use 2,2′,7,7′-Tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9′-spirobifluorene (spiro-OMeTAD) as a hole transporting layer (HTL), but the cost and stability of the polymeric HTL affects the scaling-up of PSC. This work, reports a hole- conductor free-ambient processed mixed halide PSCs with promising efficiency by tuning the morphology of the perovskite films by employing different deposition techniques (one step, two-step and dip coating method). In the dip coating method, unique cuboid structured films with good absorption and pin hole free films were obtained. The photovoltaic performances of the devices made by various deposition methods were measured at 1 sun illumination under standard conditions and achieved upto 6.5%.
U2 - 10.1016/j.matlet.2019.03.021
DO - 10.1016/j.matlet.2019.03.021
M3 - Article
SN - 0167-577X
JO - Materials Letters
JF - Materials Letters
ER -