Hole confinement and dynamics in δ-doped Ge quantum dots

M. P. Halsall; A. D F Dunbar; Y. Shiraki; M. Miura; J. P R Wells

doi:10.1016/j.jlumin.2004.01.069

Hole confinement and dynamics in δ-doped Ge quantum dots

M. P. Halsall, A. D F Dunbar, Y. Shiraki, M. Miura, J. P R Wells

Research output: Contribution to journal › Article › peer-review

Abstract

We report picosecond pump-probe studies of the dynamics of inter-level transitions in p-type Ge quantum dot structures using a free electron laser as a source of intense mid-infrared pulses. The wavelength-independent lifetime of around 210ps is much longer than have been recently reported in SiGe/Si multiple quantum-well structures. The observed pump-probe signal is ascribed to photo-excitation within the confined hole state. The presence of the dot potential reduces the phonon emission and the lifetime is strongly temperature dependent falling to 50ps at 100K. The origin of the relaxation process is unknown but is probably by acoustic phonon emission. © 2004 Elsevier B.V. All rights reserved.

Original language	English
Pages (from-to)	329-332
Number of pages	3
Journal	Journal of Luminescence
Volume	108
Issue number	1-4
DOIs	https://doi.org/10.1016/j.jlumin.2004.01.069
Publication status	Published - Jun 2004

Keywords

Carrier dynamics
Delta-doped
Infrared
Quantum dots
SiGe

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10.1016/j.jlumin.2004.01.069

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@article{40574ee8d4f34ef1b6b5e06b0d54ee99,

title = "Hole confinement and dynamics in δ-doped Ge quantum dots",

abstract = "We report picosecond pump-probe studies of the dynamics of inter-level transitions in p-type Ge quantum dot structures using a free electron laser as a source of intense mid-infrared pulses. The wavelength-independent lifetime of around 210ps is much longer than have been recently reported in SiGe/Si multiple quantum-well structures. The observed pump-probe signal is ascribed to photo-excitation within the confined hole state. The presence of the dot potential reduces the phonon emission and the lifetime is strongly temperature dependent falling to 50ps at 100K. The origin of the relaxation process is unknown but is probably by acoustic phonon emission. {\textcopyright} 2004 Elsevier B.V. All rights reserved.",

keywords = "Carrier dynamics, Delta-doped, Infrared, Quantum dots, SiGe",

author = "Halsall, {M. P.} and Dunbar, {A. D F} and Y. Shiraki and M. Miura and Wells, {J. P R}",

year = "2004",

month = jun,

doi = "10.1016/j.jlumin.2004.01.069",

language = "English",

volume = "108",

pages = "329--332",

journal = "Journal of Luminescence",

issn = "0022-2313",

publisher = "Elsevier BV",

number = "1-4",

}

TY - JOUR

T1 - Hole confinement and dynamics in δ-doped Ge quantum dots

AU - Halsall, M. P.

AU - Dunbar, A. D F

AU - Shiraki, Y.

AU - Miura, M.

AU - Wells, J. P R

PY - 2004/6

Y1 - 2004/6

N2 - We report picosecond pump-probe studies of the dynamics of inter-level transitions in p-type Ge quantum dot structures using a free electron laser as a source of intense mid-infrared pulses. The wavelength-independent lifetime of around 210ps is much longer than have been recently reported in SiGe/Si multiple quantum-well structures. The observed pump-probe signal is ascribed to photo-excitation within the confined hole state. The presence of the dot potential reduces the phonon emission and the lifetime is strongly temperature dependent falling to 50ps at 100K. The origin of the relaxation process is unknown but is probably by acoustic phonon emission. © 2004 Elsevier B.V. All rights reserved.

AB - We report picosecond pump-probe studies of the dynamics of inter-level transitions in p-type Ge quantum dot structures using a free electron laser as a source of intense mid-infrared pulses. The wavelength-independent lifetime of around 210ps is much longer than have been recently reported in SiGe/Si multiple quantum-well structures. The observed pump-probe signal is ascribed to photo-excitation within the confined hole state. The presence of the dot potential reduces the phonon emission and the lifetime is strongly temperature dependent falling to 50ps at 100K. The origin of the relaxation process is unknown but is probably by acoustic phonon emission. © 2004 Elsevier B.V. All rights reserved.

KW - Carrier dynamics

KW - Delta-doped

KW - Infrared

KW - Quantum dots

KW - SiGe

U2 - 10.1016/j.jlumin.2004.01.069

DO - 10.1016/j.jlumin.2004.01.069

M3 - Article

SN - 0022-2313

VL - 108

SP - 329

EP - 332

JO - Journal of Luminescence

JF - Journal of Luminescence

IS - 1-4

ER -

Hole confinement and dynamics in δ-doped Ge quantum dots

Abstract

Keywords

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