Hole confinement and dynamics in δ-doped Ge quantum dots

M. P. Halsall, A. D F Dunbar, Y. Shiraki, M. Miura, J. P R Wells

    Research output: Contribution to journalArticlepeer-review


    We report picosecond pump-probe studies of the dynamics of inter-level transitions in p-type Ge quantum dot structures using a free electron laser as a source of intense mid-infrared pulses. The wavelength-independent lifetime of around 210ps is much longer than have been recently reported in SiGe/Si multiple quantum-well structures. The observed pump-probe signal is ascribed to photo-excitation within the confined hole state. The presence of the dot potential reduces the phonon emission and the lifetime is strongly temperature dependent falling to 50ps at 100K. The origin of the relaxation process is unknown but is probably by acoustic phonon emission. © 2004 Elsevier B.V. All rights reserved.
    Original languageEnglish
    Pages (from-to)329-332
    Number of pages3
    JournalJournal of Luminescence
    Issue number1-4
    Publication statusPublished - Jun 2004


    • Carrier dynamics
    • Delta-doped
    • Infrared
    • Quantum dots
    • SiGe


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