Abstract
We present the hole-related electrical activity of the InAs quantum dots embedded in the n-type GaAs. We performed our experiments with the use of the Laplace and conventional deep level transient spectroscopies combined with the above GaAs band-gap illumination. We observed that depending on temperature and electric field the hole emission process is an interplay between the pure thermal emission and tunnelling processes. The tunnelling was quantitatively described by a simple model of the potential barrier.
Original language | English |
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Title of host publication | Acta Physica Polonica A|Acta Phys Pol A |
Pages | 1201-1206 |
Number of pages | 5 |
Volume | 114 |
Publication status | Published - Nov 2008 |
Event | 37th International School on the Physics of Semiconducting Compounds - Jaszowiec, POLAND Duration: 1 Jan 1824 → … http://<Go to ISI>://000260435700031 |
Conference
Conference | 37th International School on the Physics of Semiconducting Compounds |
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City | Jaszowiec, POLAND |
Period | 1/01/24 → … |
Internet address |