Hole-Related Electrical Activity of InAs/GaAs Quantum Dots

P. Kruszewski, L. Dobaczewski, V. P. Markevich, C. Mitchell, M. Missous, A. R. Peaker

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    We present the hole-related electrical activity of the InAs quantum dots embedded in the n-type GaAs. We performed our experiments with the use of the Laplace and conventional deep level transient spectroscopies combined with the above GaAs band-gap illumination. We observed that depending on temperature and electric field the hole emission process is an interplay between the pure thermal emission and tunnelling processes. The tunnelling was quantitatively described by a simple model of the potential barrier.
    Original languageEnglish
    Title of host publicationActa Physica Polonica A|Acta Phys Pol A
    Pages1201-1206
    Number of pages5
    Volume114
    Publication statusPublished - Nov 2008
    Event37th International School on the Physics of Semiconducting Compounds - Jaszowiec, POLAND
    Duration: 1 Jan 1824 → …
    http://<Go to ISI>://000260435700031

    Conference

    Conference37th International School on the Physics of Semiconducting Compounds
    CityJaszowiec, POLAND
    Period1/01/24 → …
    Internet address

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