Hole traps in n-type Ga1-xAlxAs grown by organometallic vapour phase epitaxy

R. H. Wu; D. Allsopp; A. R. Peaker

doi:10.1049/el:19820052

Hole traps in n-type Ga_1-xAl_xAs grown by organometallic vapour phase epitaxy

R. H. Wu, D. Allsopp, A. R. Peaker

Research output: Contribution to journal › Article › peer-review

Abstract

Minority carrier traps in n-type Ga_1-xAl_xAs (x = 0.25 and 0.30) grown by the organometallic vapour phase epitaxy process have been investigated by minority carrier transient spectroscopy (MCTS). Hole traps with thermal activation energies of E_v + 0.35 and 0.48 eV and a deeper centre have been observed in GaAs and at E_v + 0.20, 0.26, 0.44 and 0.78 in GaAlAs. The electron and hole capture cross-sections of these centres have also been measured.

Original language	English
Pages (from-to)	75-77
Number of pages	3
Journal	Electronics Letters
Volume	18
Issue number	2
DOIs	https://doi.org/10.1049/el:19820052
Publication status	Published - 21 Jan 1982

Keywords

Semiconductor devices and materials
Traps

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10.1049/el:19820052

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abstract = "Minority carrier traps in n-type Ga1-xAlxAs (x = 0.25 and 0.30) grown by the organometallic vapour phase epitaxy process have been investigated by minority carrier transient spectroscopy (MCTS). Hole traps with thermal activation energies of Ev + 0.35 and 0.48 eV and a deeper centre have been observed in GaAs and at Ev + 0.20, 0.26, 0.44 and 0.78 in GaAlAs. The electron and hole capture cross-sections of these centres have also been measured.",

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Y1 - 1982/1/21

N2 - Minority carrier traps in n-type Ga1-xAlxAs (x = 0.25 and 0.30) grown by the organometallic vapour phase epitaxy process have been investigated by minority carrier transient spectroscopy (MCTS). Hole traps with thermal activation energies of Ev + 0.35 and 0.48 eV and a deeper centre have been observed in GaAs and at Ev + 0.20, 0.26, 0.44 and 0.78 in GaAlAs. The electron and hole capture cross-sections of these centres have also been measured.

AB - Minority carrier traps in n-type Ga1-xAlxAs (x = 0.25 and 0.30) grown by the organometallic vapour phase epitaxy process have been investigated by minority carrier transient spectroscopy (MCTS). Hole traps with thermal activation energies of Ev + 0.35 and 0.48 eV and a deeper centre have been observed in GaAs and at Ev + 0.20, 0.26, 0.44 and 0.78 in GaAlAs. The electron and hole capture cross-sections of these centres have also been measured.

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KW - Traps

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JF - Electronics Letters

IS - 2

ER -

Hole traps in n-type Ga_1-xAl_xAs grown by organometallic vapour phase epitaxy

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