Abstract
We present a density functional theory parametrized hybrid k·p tight binding model for electronic properties of atomically thin films of transition-metal dichalcogenides, 2H-MX2 (M=Mo, W; X=S, Se). We use this model to analyze intersubband transitions in p- and n-doped 2H−MX2 films and predict the line shapes of the intersubband excitations, determined by the subband-dependent twodimensional electron and hole masses, as well as excitation lifetimes due to emission and absorption of optical phonons. We find that the intersubband spectra of atomically thin films of the 2H-MX2
family with thicknesses of N = 2 to 7 layers densely cover the infrared spectral range of wavelengths between 2 and 30 μm. The detailed analysis presented in this paper shows that for thin n-doped films, the electronic dispersion and spin-valley degeneracy of the lowest-energy subbands oscillate between odd and even number of layers, which may also o↵er interesting opportunities for quantum Hall effect studies in these systems.
family with thicknesses of N = 2 to 7 layers densely cover the infrared spectral range of wavelengths between 2 and 30 μm. The detailed analysis presented in this paper shows that for thin n-doped films, the electronic dispersion and spin-valley degeneracy of the lowest-energy subbands oscillate between odd and even number of layers, which may also o↵er interesting opportunities for quantum Hall effect studies in these systems.
Original language | English |
---|---|
Article number | 035411 |
Journal | Physical Review B |
Volume | 98 |
Issue number | 3 |
Early online date | 6 Jul 2018 |
DOIs | |
Publication status | Published - 6 Jul 2018 |
Keywords
- Transition metal dichalcogenides
- Quantum wells
- Optoelectronics
- 2D materials
Research Beacons, Institutes and Platforms
- National Graphene Institute