Hydrogen reactions with electron irradiation damage in silicon

A. R. Peaker; J. H. Evans-Freeman; P. Y.Y. Kan; L. Rubaldo; I. D. Hawkins; K. D. Vernon-Parry; L. Dobaczewski

doi:10.1016/S0921-4526(99)00463-9

Hydrogen reactions with electron irradiation damage in silicon

A. R. Peaker^*, J. H. Evans-Freeman, P. Y.Y. Kan, L. Rubaldo, I. D. Hawkins, K. D. Vernon-Parry, L. Dobaczewski

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

We have irradiated n-type CZ silicon with 2 MeV electrons at room temperature, and atomic hydrogen has been introduced either before or after irradiation from the surface by wet etching. Quantitative comparisons of vacancy-related defects before and after the hydrogen reactions have been made using high-resolution (Laplace) DLTS. A deep level appears after hydrogenation at E_c - 0.311 eV, with two components detected by Laplace DLTS. This has previously been reported to be due to either VOH or VOH₂, and is accompanied by a decrease in the intensity of the A centre (VO). The Laplace DLTS shows that the A centre emission rate is modified by the hydrogen, and a slower emission rate from the A centre is observed in the presence of hydrogen. Depth profiling shows that this modification occurs in the expected spatial location of the introduced hydrogen.

Original language	English
Pages (from-to)	243-246
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	273-274
DOIs	https://doi.org/10.1016/S0921-4526(99)00463-9
Publication status	Published - 15 Dec 1999
Event	Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) - Berkeley, CA, USA Duration: 26 Jul 1999 → 30 Jul 1999

Keywords

Silicon
hydrogen
Vacancy
Laplace DLTS

Access to Document

10.1016/S0921-4526(99)00463-9

Cite this

@article{1af23afe6d774d3984b2c292b739bf08,

title = "Hydrogen reactions with electron irradiation damage in silicon",

abstract = "We have irradiated n-type CZ silicon with 2 MeV electrons at room temperature, and atomic hydrogen has been introduced either before or after irradiation from the surface by wet etching. Quantitative comparisons of vacancy-related defects before and after the hydrogen reactions have been made using high-resolution (Laplace) DLTS. A deep level appears after hydrogenation at Ec - 0.311 eV, with two components detected by Laplace DLTS. This has previously been reported to be due to either VOH or VOH2, and is accompanied by a decrease in the intensity of the A centre (VO). The Laplace DLTS shows that the A centre emission rate is modified by the hydrogen, and a slower emission rate from the A centre is observed in the presence of hydrogen. Depth profiling shows that this modification occurs in the expected spatial location of the introduced hydrogen.",

keywords = "Silicon, hydrogen, Vacancy, Laplace DLTS",

author = "Peaker, {A. R.} and Evans-Freeman, {J. H.} and Kan, {P. Y.Y.} and L. Rubaldo and Hawkins, {I. D.} and Vernon-Parry, {K. D.} and L. Dobaczewski",

year = "1999",

month = dec,

day = "15",

doi = "10.1016/S0921-4526(99)00463-9",

language = "English",

volume = "273-274",

pages = "243--246",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier BV",

note = "Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20) ; Conference date: 26-07-1999 Through 30-07-1999",

}

TY - JOUR

T1 - Hydrogen reactions with electron irradiation damage in silicon

AU - Peaker, A. R.

AU - Evans-Freeman, J. H.

AU - Kan, P. Y.Y.

AU - Rubaldo, L.

AU - Hawkins, I. D.

AU - Vernon-Parry, K. D.

AU - Dobaczewski, L.

PY - 1999/12/15

Y1 - 1999/12/15

N2 - We have irradiated n-type CZ silicon with 2 MeV electrons at room temperature, and atomic hydrogen has been introduced either before or after irradiation from the surface by wet etching. Quantitative comparisons of vacancy-related defects before and after the hydrogen reactions have been made using high-resolution (Laplace) DLTS. A deep level appears after hydrogenation at Ec - 0.311 eV, with two components detected by Laplace DLTS. This has previously been reported to be due to either VOH or VOH2, and is accompanied by a decrease in the intensity of the A centre (VO). The Laplace DLTS shows that the A centre emission rate is modified by the hydrogen, and a slower emission rate from the A centre is observed in the presence of hydrogen. Depth profiling shows that this modification occurs in the expected spatial location of the introduced hydrogen.

AB - We have irradiated n-type CZ silicon with 2 MeV electrons at room temperature, and atomic hydrogen has been introduced either before or after irradiation from the surface by wet etching. Quantitative comparisons of vacancy-related defects before and after the hydrogen reactions have been made using high-resolution (Laplace) DLTS. A deep level appears after hydrogenation at Ec - 0.311 eV, with two components detected by Laplace DLTS. This has previously been reported to be due to either VOH or VOH2, and is accompanied by a decrease in the intensity of the A centre (VO). The Laplace DLTS shows that the A centre emission rate is modified by the hydrogen, and a slower emission rate from the A centre is observed in the presence of hydrogen. Depth profiling shows that this modification occurs in the expected spatial location of the introduced hydrogen.

KW - Silicon

KW - hydrogen

KW - Vacancy

KW - Laplace DLTS

UR - http://www.scopus.com/inward/record.url?scp=0033357057&partnerID=8YFLogxK

U2 - 10.1016/S0921-4526(99)00463-9

DO - 10.1016/S0921-4526(99)00463-9

M3 - Conference article

AN - SCOPUS:0033357057

SN - 0921-4526

VL - 273-274

SP - 243

EP - 246

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

T2 - Proceedings of the 1999 20th International Conference on Defects in Semiconductors (ICDS-20)

Y2 - 26 July 1999 through 30 July 1999

ER -

Hydrogen reactions with electron irradiation damage in silicon

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this