Identification of stable and metastable forms of VO2 centers in germanium

A. Carvalho, V. J.B. Torres, V. P. Markevich, J. Coutinho, V. V. Litvinov, A. R. Peaker, R. Jones, P. R. Briddon

Research output: Contribution to journalArticlepeer-review

Abstract

Deep level transient spectroscopy (DLTS) together with first-principles calculations are used to investigate the centers that are formed upon annealing of the dominant VO center in Ge. It is suggested that as opposed to Si, the VO2 complex in Ge is bistable and a double acceptor, with first and second acceptor levels 0.365 and 0.195 eV below the conduction band, respectively.

Original languageEnglish
Pages (from-to)192-195
Number of pages4
JournalPhysica B: Condensed Matter
Volume401-402
Early online date1 Sept 2007
DOIs
Publication statusPublished - 15 Dec 2007

Keywords

  • DLTS
  • Germanium
  • Vacancy-oxygen
  • Vibrational modes

Research Beacons, Institutes and Platforms

  • Photon Science Institute

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