Abstract
Deep level transient spectroscopy (DLTS) together with first-principles calculations are used to investigate the centers that are formed upon annealing of the dominant VO center in Ge. It is suggested that as opposed to Si, the VO2 complex in Ge is bistable and a double acceptor, with first and second acceptor levels 0.365 and 0.195 eV below the conduction band, respectively.
Original language | English |
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Pages (from-to) | 192-195 |
Number of pages | 4 |
Journal | Physica B: Condensed Matter |
Volume | 401-402 |
Early online date | 1 Sept 2007 |
DOIs | |
Publication status | Published - 15 Dec 2007 |
Keywords
- DLTS
- Germanium
- Vacancy-oxygen
- Vibrational modes
Research Beacons, Institutes and Platforms
- Photon Science Institute