Image of local density of states fluctuations in disordered metals in the differential conductance of tunneling via a resonant impurity level

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    Abstract

    Differential conductance of the resonant-tunneling structure with a single impurity level studied in the current plateau regime undergoes fluctuations around a zero average manifesting the energy dependence of the local density of states in a disordered electrode. Although the rms value of dI/dV depends on disorder and barrier transparencies, it is almost independent of temperature and, as a function of bias voltage, has a correlation function scaled by the intrinsic width of the resonance, which can be regarded as a tool to measure this quantity beyond the main differential-conductance peak. The analysis is extended to the regime of classically high magnetic fields where both the amplitude and correlation magnetic field are expected to increase.

    Original languageEnglish
    Pages (from-to)1049-1052
    Number of pages4
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume56
    Issue number3
    Publication statusPublished - 15 Jul 1997

    Research Beacons, Institutes and Platforms

    • National Graphene Institute

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