Imaging defects and junctions in single-walled carbon nanotubes by voltage-contrast scanning electron microscopy

Aravind Vijayaraghavan; Christoph W. Marquardt; Simone Dehm; Frank Hennrich; Ralph Krupke

doi:10.1016/j.carbon.2009.09.067

Imaging defects and junctions in single-walled carbon nanotubes by voltage-contrast scanning electron microscopy

Aravind Vijayaraghavan, Christoph W. Marquardt, Simone Dehm, Frank Hennrich, Ralph Krupke

Research output: Contribution to journal › Article › peer-review

Abstract

Voltage-contrast scanning electron microscopy is demonstrated as a new technique to locate and characterize defects in single-walled carbon nanotubes. This method images the surface potential along and surrounding a nanotube in device configuration and it is used here to study the following: (a) structural point-defects formed during nanotube growth, (b) nano-scale gap formed by high-current electrical breakdown, (c) electronic defect such as electron-irradiation induced metal-insulator transition, and (d) charge injection into the substrate which causes hysteresis in nanotube devices. The in situ characterization of defect healing under high bias is also shown. The origin of voltage-contrast, the influence of the above defects on the contrast profiles and optimum imaging conditions are discussed. © 2009 Elsevier Ltd. All rights reserved.

Original language	English
Pages (from-to)	494-500
Number of pages	6
Journal	Carbon
Volume	48
Issue number	2
DOIs	https://doi.org/10.1016/j.carbon.2009.09.067
Publication status	Published - Feb 2010

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title = "Imaging defects and junctions in single-walled carbon nanotubes by voltage-contrast scanning electron microscopy",

abstract = "Voltage-contrast scanning electron microscopy is demonstrated as a new technique to locate and characterize defects in single-walled carbon nanotubes. This method images the surface potential along and surrounding a nanotube in device configuration and it is used here to study the following: (a) structural point-defects formed during nanotube growth, (b) nano-scale gap formed by high-current electrical breakdown, (c) electronic defect such as electron-irradiation induced metal-insulator transition, and (d) charge injection into the substrate which causes hysteresis in nanotube devices. The in situ characterization of defect healing under high bias is also shown. The origin of voltage-contrast, the influence of the above defects on the contrast profiles and optimum imaging conditions are discussed. {\textcopyright} 2009 Elsevier Ltd. All rights reserved.",

author = "Aravind Vijayaraghavan and Marquardt, {Christoph W.} and Simone Dehm and Frank Hennrich and Ralph Krupke",

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T1 - Imaging defects and junctions in single-walled carbon nanotubes by voltage-contrast scanning electron microscopy

AU - Vijayaraghavan, Aravind

AU - Marquardt, Christoph W.

AU - Dehm, Simone

AU - Hennrich, Frank

AU - Krupke, Ralph

PY - 2010/2

Y1 - 2010/2

N2 - Voltage-contrast scanning electron microscopy is demonstrated as a new technique to locate and characterize defects in single-walled carbon nanotubes. This method images the surface potential along and surrounding a nanotube in device configuration and it is used here to study the following: (a) structural point-defects formed during nanotube growth, (b) nano-scale gap formed by high-current electrical breakdown, (c) electronic defect such as electron-irradiation induced metal-insulator transition, and (d) charge injection into the substrate which causes hysteresis in nanotube devices. The in situ characterization of defect healing under high bias is also shown. The origin of voltage-contrast, the influence of the above defects on the contrast profiles and optimum imaging conditions are discussed. © 2009 Elsevier Ltd. All rights reserved.

AB - Voltage-contrast scanning electron microscopy is demonstrated as a new technique to locate and characterize defects in single-walled carbon nanotubes. This method images the surface potential along and surrounding a nanotube in device configuration and it is used here to study the following: (a) structural point-defects formed during nanotube growth, (b) nano-scale gap formed by high-current electrical breakdown, (c) electronic defect such as electron-irradiation induced metal-insulator transition, and (d) charge injection into the substrate which causes hysteresis in nanotube devices. The in situ characterization of defect healing under high bias is also shown. The origin of voltage-contrast, the influence of the above defects on the contrast profiles and optimum imaging conditions are discussed. © 2009 Elsevier Ltd. All rights reserved.

U2 - 10.1016/j.carbon.2009.09.067

DO - 10.1016/j.carbon.2009.09.067

M3 - Article

SN - 0008-6223

VL - 48

SP - 494

EP - 500

JO - Carbon

JF - Carbon

IS - 2

ER -

Imaging defects and junctions in single-walled carbon nanotubes by voltage-contrast scanning electron microscopy

Abstract

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