Impact of collection efficiency on the optical responsivity of lattice matched InP/InGaAs heterojunction phototransistors

Hassan A. Khan; Ali A. Rezazadeh; Rashid Saleem

doi:10.1143/JJAP.51.072202

Impact of collection efficiency on the optical responsivity of lattice matched InP/InGaAs heterojunction phototransistors

Hassan A. Khan, Ali A. Rezazadeh, Rashid Saleem

Research output: Contribution to journal › Article › peer-review

Abstract

Absolute spectral response modeling of lattice matched Npn InP/In0:53Ga0:47As heterojunction phototransistors (HPTs), for communication wavelength detection, is presented in this paper. Parameters such as collection efficiency, quantum efficiency and doping concentrations affecting the flux absorption profile are discussed. The effect of collection efficiency on the optical responsivity is also highlighted and its variation with device vertical width is discussed. Measured results for optical responsivity, at several incident wavelengths, show close agreement to the modeling data for the HPTs. © 2012 The Japan Society of Applied Physics.

Original language	English
Article number	072202
Journal	Japanese Journal of Applied Physics
Volume	51
Issue number	7
DOIs	https://doi.org/10.1143/JJAP.51.072202
Publication status	Published - Jul 2012

Keywords

optical collection efficiency, optical responsivity, heterojunction phototransistors

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10.1143/JJAP.51.072202

http://jjap.jsap.jp/link?JJAP/51/072202/pdf

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title = "Impact of collection efficiency on the optical responsivity of lattice matched InP/InGaAs heterojunction phototransistors",

abstract = "Absolute spectral response modeling of lattice matched Npn InP/In0:53Ga0:47As heterojunction phototransistors (HPTs), for communication wavelength detection, is presented in this paper. Parameters such as collection efficiency, quantum efficiency and doping concentrations affecting the flux absorption profile are discussed. The effect of collection efficiency on the optical responsivity is also highlighted and its variation with device vertical width is discussed. Measured results for optical responsivity, at several incident wavelengths, show close agreement to the modeling data for the HPTs. {\textcopyright} 2012 The Japan Society of Applied Physics.",

keywords = "optical collection efficiency, optical responsivity, heterojunction phototransistors",

author = "Khan, {Hassan A.} and Rezazadeh, {Ali A.} and Rashid Saleem",

year = "2012",

month = jul,

doi = "10.1143/JJAP.51.072202",

language = "English",

volume = "51",

journal = "Japanese Journal of Applied Physics",

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publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Impact of collection efficiency on the optical responsivity of lattice matched InP/InGaAs heterojunction phototransistors

AU - Khan, Hassan A.

AU - Rezazadeh, Ali A.

AU - Saleem, Rashid

PY - 2012/7

Y1 - 2012/7

N2 - Absolute spectral response modeling of lattice matched Npn InP/In0:53Ga0:47As heterojunction phototransistors (HPTs), for communication wavelength detection, is presented in this paper. Parameters such as collection efficiency, quantum efficiency and doping concentrations affecting the flux absorption profile are discussed. The effect of collection efficiency on the optical responsivity is also highlighted and its variation with device vertical width is discussed. Measured results for optical responsivity, at several incident wavelengths, show close agreement to the modeling data for the HPTs. © 2012 The Japan Society of Applied Physics.

AB - Absolute spectral response modeling of lattice matched Npn InP/In0:53Ga0:47As heterojunction phototransistors (HPTs), for communication wavelength detection, is presented in this paper. Parameters such as collection efficiency, quantum efficiency and doping concentrations affecting the flux absorption profile are discussed. The effect of collection efficiency on the optical responsivity is also highlighted and its variation with device vertical width is discussed. Measured results for optical responsivity, at several incident wavelengths, show close agreement to the modeling data for the HPTs. © 2012 The Japan Society of Applied Physics.

KW - optical collection efficiency, optical responsivity, heterojunction phototransistors

U2 - 10.1143/JJAP.51.072202

DO - 10.1143/JJAP.51.072202

M3 - Article

SN - 0021-4922

VL - 51

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 7

M1 - 072202

ER -

Impact of collection efficiency on the optical responsivity of lattice matched InP/InGaAs heterojunction phototransistors

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