Abstract
A single-shot switching test circuit and a continuously operating converter are used to investigate dynamic on-state resistance in three 600 V GaN devices under representative converter operating conditions. The increase in dynamic on-state resistance following an off-state stress of a few micro-seconds was measured and demonstrated to be in the range of 6%-35% depending on the individual device. The dynamic on-state resistance effect is seen to be insensitive to temperature over the range 25-125T. A more severe increase in dynamic on-state resistance is observed when the device is exposed to a stress voltage for an extended stress time, in particular the e-mode devices exhibited two to three times the DC resistance. The dynamic on-state resistance has a more pronounced effect in continuously operating converters at higher switching frequencies; an increased on-state loss of 35.9% compared with the DC value is estimated for a converter operating at 300 V, 10 A, 400 kHz and 0.5 duty ratio.
| Original language | English |
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| Pages | 1689-1694 |
| Number of pages | 6 |
| Publication status | Published - 2017 |
| Event | 2017 IEEE Applied Power Electronics Conference and Exposition (APEC) - Tampa, Florida, United States Duration: 26 Mar 2017 → 30 Mar 2017 |
Conference
| Conference | 2017 IEEE Applied Power Electronics Conference and Exposition (APEC) |
|---|---|
| Country/Territory | United States |
| City | Tampa, Florida |
| Period | 26/03/17 → 30/03/17 |