Importance of non linear piezoelectric effect inWurtzite III-N semiconductors

Joydeep Pal; Geoffrey Tse; Vesel Haxha; Max A. Migliorato; Stanko Tomić

doi:10.1007/s11082-011-9518-z

Importance of non linear piezoelectric effect inWurtzite III-N semiconductors

Joydeep Pal, Geoffrey Tse, Vesel Haxha, Max A. Migliorato, Stanko Tomić

Research output: Contribution to journal › Article › peer-review

Abstract

The piezoelectric coefficients of all the binary III-N wurtzite semiconductors for both first and second order has been used to evaluate the impact of non linear piezoelectricity on quantum wells and quantum dots of III-N materials and its alloys. The often neglected second order coefficients have instead significant effects on the strain induced piezoelectric polarization. The comparison of our predictions with the experimentally obtained values reveals a much bettermatch with the internal piezoelectric fields in quantum wells and superlattices. The impact of our semi empirical approach is quite pronounced in III-N quantum dots as the excitonic properties remain highly influenced. © Springer Science+Business Media, LLC. 2011.

Original language	English
Pages (from-to)	195-203
Number of pages	8
Journal	Optical and Quantum Electronics
Volume	44
Issue number	3-5
DOIs	https://doi.org/10.1007/s11082-011-9518-z
Publication status	Published - Jun 2012

Keywords

III-nitrides
Piezoelectricity
Semiconductors
Wurtzite structures

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title = "Importance of non linear piezoelectric effect inWurtzite III-N semiconductors",

abstract = "The piezoelectric coefficients of all the binary III-N wurtzite semiconductors for both first and second order has been used to evaluate the impact of non linear piezoelectricity on quantum wells and quantum dots of III-N materials and its alloys. The often neglected second order coefficients have instead significant effects on the strain induced piezoelectric polarization. The comparison of our predictions with the experimentally obtained values reveals a much bettermatch with the internal piezoelectric fields in quantum wells and superlattices. The impact of our semi empirical approach is quite pronounced in III-N quantum dots as the excitonic properties remain highly influenced. {\textcopyright} Springer Science+Business Media, LLC. 2011.",

keywords = "III-nitrides, Piezoelectricity, Semiconductors, Wurtzite structures",

author = "Joydeep Pal and Geoffrey Tse and Vesel Haxha and Migliorato, {Max A.} and Stanko Tomi{\'c}",

note = "Times Cited: 0 SI 11th International Conference on Numerical Simulation of Optoelectronic Devices in Optical and Quantum Electronics (NUSOD) SEP 05-08, 2011 Rome, ITALY",

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doi = "10.1007/s11082-011-9518-z",

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T1 - Importance of non linear piezoelectric effect inWurtzite III-N semiconductors

AU - Pal, Joydeep

AU - Tse, Geoffrey

AU - Haxha, Vesel

AU - Migliorato, Max A.

AU - Tomić, Stanko

N1 - Times Cited: 0 SI 11th International Conference on Numerical Simulation of Optoelectronic Devices in Optical and Quantum Electronics (NUSOD) SEP 05-08, 2011 Rome, ITALY

PY - 2012/6

Y1 - 2012/6

N2 - The piezoelectric coefficients of all the binary III-N wurtzite semiconductors for both first and second order has been used to evaluate the impact of non linear piezoelectricity on quantum wells and quantum dots of III-N materials and its alloys. The often neglected second order coefficients have instead significant effects on the strain induced piezoelectric polarization. The comparison of our predictions with the experimentally obtained values reveals a much bettermatch with the internal piezoelectric fields in quantum wells and superlattices. The impact of our semi empirical approach is quite pronounced in III-N quantum dots as the excitonic properties remain highly influenced. © Springer Science+Business Media, LLC. 2011.

AB - The piezoelectric coefficients of all the binary III-N wurtzite semiconductors for both first and second order has been used to evaluate the impact of non linear piezoelectricity on quantum wells and quantum dots of III-N materials and its alloys. The often neglected second order coefficients have instead significant effects on the strain induced piezoelectric polarization. The comparison of our predictions with the experimentally obtained values reveals a much bettermatch with the internal piezoelectric fields in quantum wells and superlattices. The impact of our semi empirical approach is quite pronounced in III-N quantum dots as the excitonic properties remain highly influenced. © Springer Science+Business Media, LLC. 2011.

KW - III-nitrides

KW - Piezoelectricity

KW - Semiconductors

KW - Wurtzite structures

U2 - 10.1007/s11082-011-9518-z

DO - 10.1007/s11082-011-9518-z

M3 - Article

SN - 0306-8919

VL - 44

SP - 195

EP - 203

JO - Optical and Quantum Electronics

JF - Optical and Quantum Electronics

IS - 3-5

ER -

Importance of non linear piezoelectric effect inWurtzite III-N semiconductors

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Keywords

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