Importance of non linear piezoelectric effect inWurtzite III-N semiconductors

Joydeep Pal, Geoffrey Tse, Vesel Haxha, Max A. Migliorato, Stanko Tomić

    Research output: Contribution to journalArticlepeer-review


    The piezoelectric coefficients of all the binary III-N wurtzite semiconductors for both first and second order has been used to evaluate the impact of non linear piezoelectricity on quantum wells and quantum dots of III-N materials and its alloys. The often neglected second order coefficients have instead significant effects on the strain induced piezoelectric polarization. The comparison of our predictions with the experimentally obtained values reveals a much bettermatch with the internal piezoelectric fields in quantum wells and superlattices. The impact of our semi empirical approach is quite pronounced in III-N quantum dots as the excitonic properties remain highly influenced. © Springer Science+Business Media, LLC. 2011.
    Original languageEnglish
    Pages (from-to)195-203
    Number of pages8
    JournalOptical and Quantum Electronics
    Issue number3-5
    Publication statusPublished - Jun 2012


    • III-nitrides
    • Piezoelectricity
    • Semiconductors
    • Wurtzite structures


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