Improvement of minority carrier lifetime in GaAs/AlxGa1-xAs core-shell nanowires

N. Jiang, P. Parkinson, Q. Gao, J. Wong-Leung, S. Breuer, H.H. Tan, C. Jagadish

Research output: Chapter in Book/Conference proceedingConference contribution

Abstract

GaAs/Alx Ga1-x As core-shell nanowires were grown by metal organic chemical vapour deposition with Au-catalysed GaAs cores. Cross-section transmission electron microscope bright field images show that the tapering at bottom of the nanowires is mainly caused by GaAs cap growth. Time-resolved photo-luminescence measurements of single nanowires were taken at room temperature and a minority carrier lifetime of (1.02±0.43) ns was obtained for single nanowires with Alx Ga1-x As shell grown at 750°C. A close correlation between the shell growth temperature and minority carrier lifetime has also been observed.
Original languageEnglish
Title of host publication2012 Conference on Optoelectronic and Microelectronic Materials and Devices
Subtitle of host publicationCOMMAD 2012 Proceedings
Place of PublicationPiscataway, NJ
PublisherIEEE
Pages33-34
Number of pages2
ISBN (Print)9781467330459
DOIs
Publication statusPublished - 7 Mar 2013
EventConference on Optoelectronic and Microelectronic Materials and Devices - Melbourne, Australia
Duration: 12 Dec 201214 Dec 2012
Conference number: 96239

Conference

ConferenceConference on Optoelectronic and Microelectronic Materials and Devices
Abbreviated titleCOMMAD 2012
Country/TerritoryAustralia
CityMelbourne
Period12/12/1214/12/12

Fingerprint

Dive into the research topics of 'Improvement of minority carrier lifetime in GaAs/AlxGa1-xAs core-shell nanowires'. Together they form a unique fingerprint.

Cite this