Abstract
GaAs/Alx Ga1-x As core-shell nanowires were grown by metal organic chemical vapour deposition with Au-catalysed GaAs cores. Cross-section transmission electron microscope bright field images show that the tapering at bottom of the nanowires is mainly caused by GaAs cap growth. Time-resolved photo-luminescence measurements of single nanowires were taken at room temperature and a minority carrier lifetime of (1.02±0.43) ns was obtained for single nanowires with Alx Ga1-x As shell grown at 750°C. A close correlation between the shell growth temperature and minority carrier lifetime has also been observed.
Original language | English |
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Title of host publication | 2012 Conference on Optoelectronic and Microelectronic Materials and Devices |
Subtitle of host publication | COMMAD 2012 Proceedings |
Place of Publication | Piscataway, NJ |
Publisher | IEEE |
Pages | 33-34 |
Number of pages | 2 |
ISBN (Print) | 9781467330459 |
DOIs | |
Publication status | Published - 7 Mar 2013 |
Event | Conference on Optoelectronic and Microelectronic Materials and Devices - Melbourne, Australia Duration: 12 Dec 2012 → 14 Dec 2012 Conference number: 96239 |
Conference
Conference | Conference on Optoelectronic and Microelectronic Materials and Devices |
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Abbreviated title | COMMAD 2012 |
Country/Territory | Australia |
City | Melbourne |
Period | 12/12/12 → 14/12/12 |