Improving organic transistor performance with Shottky contacts

Raoul Schroeder, Leszek Majewski, Martin Grell

    Research output: Contribution to journalArticlepeer-review


    Organic field-effect transistors ~OFETs! with non-Ohmic contacts, e.g., pentacene with gold electrodes, exhibit a linearly growing threshold voltage with increased film thickness due to tunnel injection [R. Schroeder et al., Appl. Phys. Lett. 83, 3201 (2003)]. In this letter, we demonstrate gold/pentacene OFETs with a low threshold voltage independent of pentacene thickness. By doping the pentacene in the contact area with FeCl3 ~iron-III-chloride!, the metal-insulator-type tunneling barrier was changed to a metal-semiconductor Schottky barrier. Since the injection through a Schottky barrier depends on the potential and not on the electric field, the threshold voltage is no longer a function of the semiconductor thickness. Through selective doping of the area under the electrode, the channel remains undoped, and large on/off ratios are retained.
    Original languageEnglish
    Pages (from-to)1004-1006
    Number of pages3
    JournalApplied Physics Letters
    Issue number6
    Publication statusPublished - 9 Feb 2004


    • Organic field-effect transistor (OFET)
    • Schottky contacts


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