In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy

K. B. Ozanyan; P. J. Parbrook; M. Hopkinson; C. R. Whitehouse; Z. Sobiesierski; D. I. Westwood

In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy

K. B. Ozanyan, P. J. Parbrook, M. Hopkinson, C. R. Whitehouse, Z. Sobiesierski, D. I. Westwood

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Abstract

Reflection anisotropy spectroscopy (RAS) and reflection high-energy electron diffraction (RHEED) were applied to study clean InP(001) surfaces prepared by molecular beam epitaxy (MBE). At phosphorus beam equivalent pressures (BEPs) between 3.5×10-7 and 3.5×10-6 mbar and substrate temperature (Ts) falling from 590 to 150 °C, (2×4), (2×1), (2×2), and c(4×4) RHEED patterns are observed. The main RAS features, observed at 1.7-1.9 and 2.6-2.9 eV are assigned to In and P dimers, respectively. The above reconstruction sequence is associated closely with transformations identified in RAS signatures that are induced by progressively increasing the P surface coverage. The RAS results also imply the existence of (2×4)α and (2×4)β phases. A surface-phase diagram for MBE-grown (001) InP, in the whole range of Ts and phosphorus BEPs is proposed. © 1997 American Institute of Physics.

Original language	English
Pages (from-to)	474-476
Number of pages	2
Journal	Journal of Applied Physics
Volume	82
Issue number	1
Publication status	Published - 1 Jul 1997

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@article{df7c784fc23e44cf86686b1535a61265,

title = "In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy",

abstract = "Reflection anisotropy spectroscopy (RAS) and reflection high-energy electron diffraction (RHEED) were applied to study clean InP(001) surfaces prepared by molecular beam epitaxy (MBE). At phosphorus beam equivalent pressures (BEPs) between 3.5×10-7 and 3.5×10-6 mbar and substrate temperature (Ts) falling from 590 to 150 °C, (2×4), (2×1), (2×2), and c(4×4) RHEED patterns are observed. The main RAS features, observed at 1.7-1.9 and 2.6-2.9 eV are assigned to In and P dimers, respectively. The above reconstruction sequence is associated closely with transformations identified in RAS signatures that are induced by progressively increasing the P surface coverage. The RAS results also imply the existence of (2×4)α and (2×4)β phases. A surface-phase diagram for MBE-grown (001) InP, in the whole range of Ts and phosphorus BEPs is proposed. {\textcopyright} 1997 American Institute of Physics.",

author = "Ozanyan, {K. B.} and Parbrook, {P. J.} and M. Hopkinson and Whitehouse, {C. R.} and Z. Sobiesierski and Westwood, {D. I.}",

year = "1997",

month = jul,

day = "1",

language = "English",

volume = "82",

pages = "474--476",

journal = "Journal of Applied Physics",

issn = "1089-7550",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy

AU - Ozanyan, K. B.

AU - Parbrook, P. J.

AU - Hopkinson, M.

AU - Whitehouse, C. R.

AU - Sobiesierski, Z.

AU - Westwood, D. I.

PY - 1997/7/1

Y1 - 1997/7/1

N2 - Reflection anisotropy spectroscopy (RAS) and reflection high-energy electron diffraction (RHEED) were applied to study clean InP(001) surfaces prepared by molecular beam epitaxy (MBE). At phosphorus beam equivalent pressures (BEPs) between 3.5×10-7 and 3.5×10-6 mbar and substrate temperature (Ts) falling from 590 to 150 °C, (2×4), (2×1), (2×2), and c(4×4) RHEED patterns are observed. The main RAS features, observed at 1.7-1.9 and 2.6-2.9 eV are assigned to In and P dimers, respectively. The above reconstruction sequence is associated closely with transformations identified in RAS signatures that are induced by progressively increasing the P surface coverage. The RAS results also imply the existence of (2×4)α and (2×4)β phases. A surface-phase diagram for MBE-grown (001) InP, in the whole range of Ts and phosphorus BEPs is proposed. © 1997 American Institute of Physics.

AB - Reflection anisotropy spectroscopy (RAS) and reflection high-energy electron diffraction (RHEED) were applied to study clean InP(001) surfaces prepared by molecular beam epitaxy (MBE). At phosphorus beam equivalent pressures (BEPs) between 3.5×10-7 and 3.5×10-6 mbar and substrate temperature (Ts) falling from 590 to 150 °C, (2×4), (2×1), (2×2), and c(4×4) RHEED patterns are observed. The main RAS features, observed at 1.7-1.9 and 2.6-2.9 eV are assigned to In and P dimers, respectively. The above reconstruction sequence is associated closely with transformations identified in RAS signatures that are induced by progressively increasing the P surface coverage. The RAS results also imply the existence of (2×4)α and (2×4)β phases. A surface-phase diagram for MBE-grown (001) InP, in the whole range of Ts and phosphorus BEPs is proposed. © 1997 American Institute of Physics.

M3 - Article

SN - 1089-7550

VL - 82

SP - 474

EP - 476

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

ER -

In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy

Abstract

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