In situ Schottky contacts to molecular-beam epitaxially grown gallium antimonide

I. Poole; M. Missous; M. E. Lee; K. E. Singer

doi:10.1063/1.339201

In situ Schottky contacts to molecular-beam epitaxially grown gallium antimonide

I. Poole, M. Missous, M. E. Lee, K. E. Singer

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Abstract

Rectifying contacts have been made by depositing epitaxial films of aluminum on both homo- and heteroepitaxial layers of n-type GaSb grown by molecular-beam epitaxy. The barrier heights determined from the current-voltage and capacitance-voltage characteristics of these contacts were 0.54 and 0.56 eV, respectively. The significance of these results is briefly discussed.

Original language	English
Pages (from-to)	3988-3990
Number of pages	3
Journal	Journal of Applied Physics
Volume	62
Issue number	9
DOIs	https://doi.org/10.1063/1.339201
Publication status	Published - 1 Dec 1987

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@article{d9655d69d540450fbc9cf3f4e0dadcfd,

title = "In situ Schottky contacts to molecular-beam epitaxially grown gallium antimonide",

abstract = "Rectifying contacts have been made by depositing epitaxial films of aluminum on both homo- and heteroepitaxial layers of n-type GaSb grown by molecular-beam epitaxy. The barrier heights determined from the current-voltage and capacitance-voltage characteristics of these contacts were 0.54 and 0.56 eV, respectively. The significance of these results is briefly discussed.",

author = "I. Poole and M. Missous and Lee, {M. E.} and Singer, {K. E.}",

year = "1987",

month = dec,

day = "1",

doi = "10.1063/1.339201",

language = "English",

volume = "62",

pages = "3988--3990",

journal = "Journal of Applied Physics ",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - In situ Schottky contacts to molecular-beam epitaxially grown gallium antimonide

AU - Poole, I.

AU - Missous, M.

AU - Lee, M. E.

AU - Singer, K. E.

PY - 1987/12/1

Y1 - 1987/12/1

N2 - Rectifying contacts have been made by depositing epitaxial films of aluminum on both homo- and heteroepitaxial layers of n-type GaSb grown by molecular-beam epitaxy. The barrier heights determined from the current-voltage and capacitance-voltage characteristics of these contacts were 0.54 and 0.56 eV, respectively. The significance of these results is briefly discussed.

AB - Rectifying contacts have been made by depositing epitaxial films of aluminum on both homo- and heteroepitaxial layers of n-type GaSb grown by molecular-beam epitaxy. The barrier heights determined from the current-voltage and capacitance-voltage characteristics of these contacts were 0.54 and 0.56 eV, respectively. The significance of these results is briefly discussed.

UR - http://www.scopus.com/inward/record.url?scp=0010643627&partnerID=8YFLogxK

U2 - 10.1063/1.339201

DO - 10.1063/1.339201

M3 - Article

AN - SCOPUS:0010643627

SN - 0021-8979

VL - 62

SP - 3988

EP - 3990

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

ER -

In situ Schottky contacts to molecular-beam epitaxially grown gallium antimonide

Abstract

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