Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping

Jessica L. Boland; Alberto Casadei; Gozde Tuetuencueoglu; Federico Matteini; Christopher L. Davies; Fauzia Jabeen; Hannah J. Joyce; Laura M. Herz; Anna Fontcuberta i Morral; Michael B. Johnston

doi:10.1021/acsnano.5b07579

Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping

Jessica L. Boland, Alberto Casadei, Gozde Tuetuencueoglu, Federico Matteini, Christopher L. Davies, Fauzia Jabeen, Hannah J. Joyce, Laura M. Herz, Anna Fontcuberta i Morral, Michael B. Johnston

Research output: Contribution to journal › Article › peer-review

Abstract

Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and optoelectronic devices. Here, we present a noncontact method based on time-resolved terahertz photoconductivity for assessing n- and p-type doping efficiency in nanowires. Using this technique, we measure extrinsic electron and hole concentrations in excess of 1018 cm–3 for GaAs nanowires with n-type and p-type doped shells. Furthermore, we show that controlled doping can significantly increase the photoconductivity lifetime of GaAs nanowires by over an order of magnitude: from 0.13 ns in undoped nanowires to 3.8 and 2.5 ns in n-doped and p-doped nanowires, respectively. Thus, controlled doping can be used to reduce the effects of parasitic surface recombination in optoelectronic nanowire devices, which is promising for nanowire devices, such as solar cells and nanowire lasers.

Original language	English
Pages (from-to)	4219-4227
Journal	ACS Nano
Volume	10
Issue number	4
Early online date	9 Mar 2016
DOIs	https://doi.org/10.1021/acsnano.5b07579
Publication status	Published - Apr 2016

Keywords

GaAs
n-type doping
p-type doping
terahertz spectroscopy
photoconductivity
mobility
carrier lifetime
surface states
surface recombination
nanowires

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1021/acsnano.5b07579

3 Invited talk
1 Oral presentation

Unveiling Temperature-Dependent Scattering Mechanisms In Semiconductor Nanowires Using Optical-Pump Terahertz-Probe Spectroscopy
Boland, J. (Keynote speaker)
2 Sept 2019
Activity: Talk or presentation › Invited talk › Research
Terahertz Lights up the Nanoscale
Boland, J. (Keynote speaker)
13 Dec 2018
Activity: Talk or presentation › Invited talk › Research
Ultrafast lights up the nanoscale: Revealing the optoelectronic properties of semiconductor nanowires via terahertz spectroscopy
Boland, J. (Keynote speaker)
11 Jun 2018 → 15 Jun 2018
Activity: Talk or presentation › Invited talk › Research

Dr. Jessica Boland erhält Jocelyn Bell Burnell-Preis Auszeichnung für Nachwuchswissenschaftlerin
Boland, J.
8/11/17
1 Media contribution
Press/Media: Research
Postdoc wins Jocelyn Bell Burnell Prize
Boland, J.
11/10/17
1 Media contribution
Press/Media: Research

Cite this

@article{0b48e8031a9748199429a0d735ce3123,

title = "Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping",

abstract = "Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and optoelectronic devices. Here, we present a noncontact method based on time-resolved terahertz photoconductivity for assessing n- and p-type doping efficiency in nanowires. Using this technique, we measure extrinsic electron and hole concentrations in excess of 1018 cm–3 for GaAs nanowires with n-type and p-type doped shells. Furthermore, we show that controlled doping can significantly increase the photoconductivity lifetime of GaAs nanowires by over an order of magnitude: from 0.13 ns in undoped nanowires to 3.8 and 2.5 ns in n-doped and p-doped nanowires, respectively. Thus, controlled doping can be used to reduce the effects of parasitic surface recombination in optoelectronic nanowire devices, which is promising for nanowire devices, such as solar cells and nanowire lasers.",

keywords = "GaAs, n-type doping, p-type doping, terahertz spectroscopy, photoconductivity, mobility, carrier lifetime, surface states, surface recombination, nanowires",

author = "Boland, {Jessica L.} and Alberto Casadei and Gozde Tuetuencueoglu and Federico Matteini and Davies, {Christopher L.} and Fauzia Jabeen and Joyce, {Hannah J.} and Herz, {Laura M.} and {Fontcuberta i Morral}, Anna and Johnston, {Michael B.}",

year = "2016",

month = apr,

doi = "10.1021/acsnano.5b07579",

language = "English",

volume = "10",

pages = "4219--4227",

journal = "ACS Nano",

issn = "1936-0851",

publisher = "American Chemical Society",

number = "4",

}

TY - JOUR

T1 - Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping

AU - Boland, Jessica L.

AU - Casadei, Alberto

AU - Tuetuencueoglu, Gozde

AU - Matteini, Federico

AU - Davies, Christopher L.

AU - Jabeen, Fauzia

AU - Joyce, Hannah J.

AU - Herz, Laura M.

AU - Fontcuberta i Morral, Anna

AU - Johnston, Michael B.

PY - 2016/4

Y1 - 2016/4

N2 - Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and optoelectronic devices. Here, we present a noncontact method based on time-resolved terahertz photoconductivity for assessing n- and p-type doping efficiency in nanowires. Using this technique, we measure extrinsic electron and hole concentrations in excess of 1018 cm–3 for GaAs nanowires with n-type and p-type doped shells. Furthermore, we show that controlled doping can significantly increase the photoconductivity lifetime of GaAs nanowires by over an order of magnitude: from 0.13 ns in undoped nanowires to 3.8 and 2.5 ns in n-doped and p-doped nanowires, respectively. Thus, controlled doping can be used to reduce the effects of parasitic surface recombination in optoelectronic nanowire devices, which is promising for nanowire devices, such as solar cells and nanowire lasers.

AB - Controlled doping of GaAs nanowires is crucial for the development of nanowire-based electronic and optoelectronic devices. Here, we present a noncontact method based on time-resolved terahertz photoconductivity for assessing n- and p-type doping efficiency in nanowires. Using this technique, we measure extrinsic electron and hole concentrations in excess of 1018 cm–3 for GaAs nanowires with n-type and p-type doped shells. Furthermore, we show that controlled doping can significantly increase the photoconductivity lifetime of GaAs nanowires by over an order of magnitude: from 0.13 ns in undoped nanowires to 3.8 and 2.5 ns in n-doped and p-doped nanowires, respectively. Thus, controlled doping can be used to reduce the effects of parasitic surface recombination in optoelectronic nanowire devices, which is promising for nanowire devices, such as solar cells and nanowire lasers.

KW - GaAs

KW - n-type doping

KW - p-type doping

KW - terahertz spectroscopy

KW - photoconductivity

KW - mobility

KW - carrier lifetime

KW - surface states

KW - surface recombination

KW - nanowires

U2 - 10.1021/acsnano.5b07579

DO - 10.1021/acsnano.5b07579

M3 - Article

SN - 1936-0851

VL - 10

SP - 4219

EP - 4227

JO - ACS Nano

JF - ACS Nano

IS - 4

ER -

Increased Photoconductivity Lifetime in GaAs Nanowires by Controlled n-Type and p-Type Doping

Abstract

Keywords

UN SDGs

Access to Document

Fingerprint

Activities

Unveiling Temperature-Dependent Scattering Mechanisms In Semiconductor Nanowires Using Optical-Pump Terahertz-Probe Spectroscopy

Terahertz Lights up the Nanoscale

Ultrafast lights up the nanoscale: Revealing the optoelectronic properties of semiconductor nanowires via terahertz spectroscopy

Press/Media

Dr. Jessica Boland erhält Jocelyn Bell Burnell-Preis Auszeichnung für Nachwuchswissenschaftlerin

Postdoc wins Jocelyn Bell Burnell Prize

Cite this