Indium-Doped Silicon for Solar Cells—Light-Induced Degradation and Deep-Level Traps

Joyce Ann T. De Guzman; Vladimir P. Markevich; Ian D. Hawkins; Hussein M. Ayedh; José Coutinho; Jeff Binns; Robert Falster; Nikolay V. Abrosimov; Iain F. Crowe; Matthew P. Halsall; Anthony R. Peaker

doi:10.1002/pssa.202100108

Indium-Doped Silicon for Solar Cells—Light-Induced Degradation and Deep-Level Traps

Joyce Ann T. De Guzman^*, Vladimir P. Markevich, Ian D. Hawkins, Hussein M. Ayedh, José Coutinho, Jeff Binns, Robert Falster, Nikolay V. Abrosimov, Iain F. Crowe, Matthew P. Halsall, Anthony R. Peaker

^*Corresponding author for this work

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Abstract

Indium-doped silicon is considered a possible p-type material for solar cells to avoid light-induced degradation (LID), which occurs in cells made from boron-doped Czochralski (Cz) silicon. Herein, the defect reactions associated with indium-related LID are examined and a deep donor is detected, which is attributed to a negative-U defect believed to be In_sO₂. In the presence of minority carriers or above bandgap light, the deep donor transforms to a shallow acceptor. An analogous transformation in boron-doped material is related to the B_sO₂ defect that is a precursor of the center responsible for BO LID. The electronic properties of In_sO₂ are determined and compared to those of the B_sO₂ defect. Structures of the B_sO₂ and In_sO₂ defects in different charges states are found using first-principles modeling. The results of the modeling can explain both the similarities and the differences between the B_sO₂ and In_sO₂ properties.

Original language	English
Journal	Physica Status Solidi (A) Applications and Materials Science
DOIs	https://doi.org/10.1002/pssa.202100108
Publication status	Published - 21 Jul 2021

Keywords

indium-doped silicon
light-induced degradation
oxygen recombination enhanced reactions
solar cells

Research Beacons, Institutes and Platforms

Photon Science Institute

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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title = "Indium-Doped Silicon for Solar Cells—Light-Induced Degradation and Deep-Level Traps",

abstract = "Indium-doped silicon is considered a possible p-type material for solar cells to avoid light-induced degradation (LID), which occurs in cells made from boron-doped Czochralski (Cz) silicon. Herein, the defect reactions associated with indium-related LID are examined and a deep donor is detected, which is attributed to a negative-U defect believed to be InsO2. In the presence of minority carriers or above bandgap light, the deep donor transforms to a shallow acceptor. An analogous transformation in boron-doped material is related to the BsO2 defect that is a precursor of the center responsible for BO LID. The electronic properties of InsO2 are determined and compared to those of the BsO2 defect. Structures of the BsO2 and InsO2 defects in different charges states are found using first-principles modeling. The results of the modeling can explain both the similarities and the differences between the BsO2 and InsO2 properties.",

keywords = "indium-doped silicon, light-induced degradation, oxygen recombination enhanced reactions, solar cells",

author = "{De Guzman}, {Joyce Ann T.} and Markevich, {Vladimir P.} and Hawkins, {Ian D.} and Ayedh, {Hussein M.} and Jos{\'e} Coutinho and Jeff Binns and Robert Falster and Abrosimov, {Nikolay V.} and Crowe, {Iain F.} and Halsall, {Matthew P.} and Peaker, {Anthony R.}",

note = "Funding Information: The authors would like to thank EPSRC (UK) for funding this work via grant EP/TO25131/1. J.A.T.D.G. would like to thank the Government of the Philippines through the Department of Science and Technology (DOST) for her Ph.D. funding. J.C. is thankful for the support of the i3N projects, Refs. UIDB/50025/2020 and UIDP/50025/2020, financed by the Funda{\c c}{\~a}o para a Ci{\^e}ncia e a Tecnologia in Portugal. Publisher Copyright: {\textcopyright} 2021 The Authors. physica status solidi (a) applications and materials science published by Wiley-VCH GmbH",

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AU - De Guzman, Joyce Ann T.

AU - Markevich, Vladimir P.

AU - Hawkins, Ian D.

AU - Ayedh, Hussein M.

AU - Coutinho, José

AU - Binns, Jeff

AU - Falster, Robert

AU - Abrosimov, Nikolay V.

AU - Crowe, Iain F.

AU - Halsall, Matthew P.

AU - Peaker, Anthony R.

N1 - Funding Information: The authors would like to thank EPSRC (UK) for funding this work via grant EP/TO25131/1. J.A.T.D.G. would like to thank the Government of the Philippines through the Department of Science and Technology (DOST) for her Ph.D. funding. J.C. is thankful for the support of the i3N projects, Refs. UIDB/50025/2020 and UIDP/50025/2020, financed by the Fundação para a Ciência e a Tecnologia in Portugal. Publisher Copyright: © 2021 The Authors. physica status solidi (a) applications and materials science published by Wiley-VCH GmbH

PY - 2021/7/21

Y1 - 2021/7/21

N2 - Indium-doped silicon is considered a possible p-type material for solar cells to avoid light-induced degradation (LID), which occurs in cells made from boron-doped Czochralski (Cz) silicon. Herein, the defect reactions associated with indium-related LID are examined and a deep donor is detected, which is attributed to a negative-U defect believed to be InsO2. In the presence of minority carriers or above bandgap light, the deep donor transforms to a shallow acceptor. An analogous transformation in boron-doped material is related to the BsO2 defect that is a precursor of the center responsible for BO LID. The electronic properties of InsO2 are determined and compared to those of the BsO2 defect. Structures of the BsO2 and InsO2 defects in different charges states are found using first-principles modeling. The results of the modeling can explain both the similarities and the differences between the BsO2 and InsO2 properties.

AB - Indium-doped silicon is considered a possible p-type material for solar cells to avoid light-induced degradation (LID), which occurs in cells made from boron-doped Czochralski (Cz) silicon. Herein, the defect reactions associated with indium-related LID are examined and a deep donor is detected, which is attributed to a negative-U defect believed to be InsO2. In the presence of minority carriers or above bandgap light, the deep donor transforms to a shallow acceptor. An analogous transformation in boron-doped material is related to the BsO2 defect that is a precursor of the center responsible for BO LID. The electronic properties of InsO2 are determined and compared to those of the BsO2 defect. Structures of the BsO2 and InsO2 defects in different charges states are found using first-principles modeling. The results of the modeling can explain both the similarities and the differences between the BsO2 and InsO2 properties.

KW - indium-doped silicon

KW - light-induced degradation

KW - oxygen recombination enhanced reactions

KW - solar cells

U2 - 10.1002/pssa.202100108

DO - 10.1002/pssa.202100108

M3 - Article

AN - SCOPUS:85110967328

SN - 1862-6300

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

ER -

Indium-Doped Silicon for Solar Cells—Light-Induced Degradation and Deep-Level Traps

Abstract

Keywords

Research Beacons, Institutes and Platforms

UN SDGs

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